High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer Appl. Phys. Lett. 86, 012109 (2005); 10.1063/1.1844034Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy

We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfO x buffer layer between ZnO channel and amorphous silicon–nitride gate insulator. The TFT structure, dimensions, and materials set are identical to those of the commercial amorphous silicon (a-Si) TFTs in active matrix liquid crystal display, except for the channel and buffer layers replacing a-Si. The field effect mobility can be as high as 7 cm2·V-1·s-1 for devices with maximum process temperature of 300°C. The process temperature can be reduced to 150°C without much degrading the performance, showing the possibility of the use of polymer substrate.

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be symmetrical and nearly symmetrical break-ups of all naturally occurring nuclides have been classified as to relative probability by the ASAFM and the ranges ofthe two cold product liagments were calculated. 'IXe liagment ranges of 8.7 and 5.5 fim in mica for respectively the two theoretically most probable disintegmtions 'I'Hf = "Kr t % and '30Ba = 66Ni t MNi fit well lhe 8.6 and 5.2 pm radii of the two most abundant dwarf halo groups.

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