Can ZnO Eat Market in Optoelectronic Applications?

Kawasaki, Masato; Tamura, Kazuchika; Saikusa, K.; Aita, Takuyo; Tsukazaki, Atsushi; Ohtomo, A.; Jin, Zhicheng; Matsumoto, Yoshinari; Fukumura, Tomoteru; Koinuma, Hideomi; Ohmaki, Yuji; Kishimoto, Seiji; Ohno, Yukio; Matsukura, F.; Ohno, Hideo; Makino, Takahiro; Tuân, Nguyễn Trọng; Sun, Huanhuan; Chia, Ching-Kean; Segawa, Y.; Tang, Zhen‐Kun; Wang, G. K. L.

doi:10.7567/ssdm.2000.e-1-1

Cited by 2 publications

(3 citation statements)

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“…The interest is in part because it is expected that the characteristics of TTFT will not degrade on exposure to visible light due to the wide band gap of its active channel layer, whereas the characteristics of amorphous or polycrystalline Si TFT do degrade. In this vein, a number of reports are already available on ZnO-based TTFT [133][134][135][136][137][138][139][140] using various methods for ZnO growth.…”

Section: Transparent Thin Film Transistorsmentioning

confidence: 99%

Preparation and properties of ZnO and devices

Izyumskaya

Avrutin

Özgür

et al. 2007

Physica Status Solidi (b)

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ZnO has gained interest in part because of its large exciton binding energy (60 meV), good for lasing with low threshold. The renewed interest in ZnO is fuelled by availability of high quality substrates, reports of p-type conductivity, and ferromagnetic behavior when doped with transitions metals. The field is also fuelled by theoretical predictions and perhaps experimental confirmation of ferromagnetism at room temperature for potential spintronics applications. Despite great strides there are still many challenges, the chief among them is the attainment of reproducibly low resistivity p-type ZnO. While ZnO already has many industrial applications owing to its piezoelectric properties and bandgap in the near UV, its applications to optoelectronic devices utilizing electrical injection has not yet been put to practice mainly due to the lack of p-type epitaxial layers. This review provides a discussion of some of the growth issues of ZnObased epitaxial and heteroepitaxial layers and their use in a variety of devices.

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Section: Transparent Thin Film Transistorsmentioning

confidence: 99%

Preparation and properties of ZnO and devices

Izyumskaya

Avrutin

Özgür

et al. 2007

Physica Status Solidi (b)

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“…It has been commonly used in its polycrystalline form for over a hundred years in a wide range of applications: facial powders, ointments, sunscreens, catalysts, lubricant additives, paint pigmentation, piezoelectric transducers, varistors, and as transparent conducting electrodes (7)(8)(9)(10)(11) . Recent improvements in the growth of high quality, single crystalline ZnO in both bulk and epitaxial forms has renewed interest in this material (12)(13)(14)(15)(16)(17)(18)(19)(20)(21) . ZnO has numerous attractive characteristics for electronic and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

“…The exciton binding energy is ~60meV for ZnO, as compared to GaN, ~25 meV; the higher exciton binding energy enhances the luminescence efficiency of light emission. ZnO has exhibited better radiation resistance than GaN for devices used in space and nuclear applications (15,16) . ZnO can be grown on inexpensive substrates, such as glass, at relatively low temperatures.…”

Section: Introductionmentioning

confidence: 99%

Comparison of ZnO Dry Etching in High Density Inductively Coupled CH₄/H₂ and C₂H₆/H₂-Based Chemistries

et al. 2006

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CH4/H2 and C2H6/H2-based discharges are attractive for dry etching of single crystal ZnO because of their non-corrosive nature. We show that substitution of C2H6 for CH4 increases the ZnO etch rate by approximately a factor of 2 both with and without any inert gas additive. The C2H6/H2/Ar mixture provides a strong enhancement over pure Ar sputtering, in sharp contrast to the case of CH4/H2/Ar.The threshold ion energy for initiating etching is 42.4 eV for C2H6/H2/Ar and 59.8eV for CH4/H2/Ar. The etched surface morphologies were smooth, independent of the chemistry and the Zn/O ratio in the near-surface region was unchanged within experimental error after etching with both chemistries. The plasma etching improved the band-edge photoluminescence intensity and suppressed the deep level emission from the bulk ZnO under our conditions, due possibly to removal of surface contamination layer.

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Can ZnO Eat Market in Optoelectronic Applications?

Cited by 2 publications

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Preparation and properties of ZnO and devices

Preparation and properties of ZnO and devices

Comparison of ZnO Dry Etching in High Density Inductively Coupled CH₄/H₂ and C₂H₆/H₂-Based Chemistries

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Can ZnO Eat Market in Optoelectronic Applications?

Cited by 2 publications

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Preparation and properties of ZnO and devices

Preparation and properties of ZnO and devices

Comparison of ZnO Dry Etching in High Density Inductively Coupled CH4/H2 and C2H6/H2-Based Chemistries

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Comparison of ZnO Dry Etching in High Density Inductively Coupled CH₄/H₂ and C₂H₆/H₂-Based Chemistries