High Mobility Thin Film Transistors with Transparent ZnO Channels

Nishii, Junya; Hossain, Faruque M.; Takagi, S.; Aita, T.; Saikusa, K.; Ohmaki, Yuji; Ohkubo, I.; Kishimoto, S.; Ohtomo, Akira; Fukumura, Tomoteru; Matsukura, F.; Ohno, Y.; Koinuma, Hideomi; Ohno, Hideo; Kawasaki, Masashi

doi:10.1143/jjap.42.l347

Cited by 283 publications

(172 citation statements)

References 9 publications

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“…Th e oxide TFT fever started in 2003 with reports of several crystalline oxide TFTs using ZnO [37][38][39][40] and InGaZnO 4 [41] channels. ZnO TFTs have been studied intensively because this structure is expected to exhibit better performance than a-Si:H and organic TFTs owing to the large Hall mobility (200 cm 2 /V s) of single-crystal ZnO and the ready formation of semiconducting crystalline thin fi lms even on unheated substrates.…”

Section: Brief History Of Aossmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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Section: Brief History Of Aossmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…Metal oxide semiconductors, in particular, are very attractive for implementation into thin-film transistors (TFTs) [1][2] mainly because of their high charge 2 carrier mobility, high optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility [3][4][5] . Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] .…”

mentioning

confidence: 99%

“…Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] .…”

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Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

et al. 2010

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The ever increasing demand for high performance electronic devices that can be fabricated onto large-area substrates employing low manufacturing cost techniques has given a boost to the development of alternative types of semiconductor materials, such as organics and metal oxides, with desirable physical characteristics that are absent in their traditional inorganic counterparts. Metal oxide semiconductors, in particular, are very attractive for implementation into thin-film transistors (TFTs) [1][2] mainly because of their high charge 2 carrier mobility, high optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility [3][4][5] . Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] . Many of these materials have been investigated for applications in thin-film electronics where transistors with electron mobilities up to 140 cm 2 /Vs have been demonstrated [7,[11][12][13][14][15][16] . Despite the great promise however, the application of vacuum-based technologies for the deposition of complex oxide semiconductors suffers from incompatibility with large-area substrates and hence high manufacturing cost. To this end, the development of alternative deposition methods based on solution processing paradigms could provide a breakthrough in both cost and performance by marrying fabrication simplicity with high-throughput manufacturing.In recent years a wide variety of soluble precursors compounds have been examined as potential alternatives for the fabrication of oxide-based TFTs using large area deposition methods including spin casting, dip coating and spray pyrolysis. For example, metal oxides such as zinc oxide (ZnO) [17][18][19][20][21][22] , indium oxide (In 2 O 3 ) [23][24] , indium gallium oxide (InGaO) [25] , indium zinc oxide (InZnO) [18][19][20][21][22][23][24][25][26] and zinc tin oxide (ZnSnO) [27] have been synthesised using soluble precursors and implemented into TFT structures. Despite the process simplicity, excellent charge carrier mobilities have been achieved, clearly demonstrating the significant potential of this alternative processing methodology. Here we show how spray pyrolysis (SP) can be used for the deposition of doped ZnO films and the fabrication of high electron mobility TFTs onto large area substrates under ambient atmosphere. Doping is achieved by simple physical blending of the soluble precursor compounds in water or alcohol based solutions. Among the various dopants studied, transistors fabricated using Li doped ZnO were 3 found to yield the best performance with maximum electron mobility > 50 cm 2 /Vs and on/off current modulation ratio exceeding 10 6 .Preparation of the Li doped precursor solutions is described in th...

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“…12 The PL of ZnO has been extensively studied for its potential optical applications. The detection of UV light (365 nm) using ZnO NWs has been reported and no photoresponse to longer wavelength is reported.…”

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confidence: 99%

Photoluminescence and polarized photodetection of single ZnO nanowires

Fan

Chang

et al. 2004

Applied Physics Letters

338

230

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Single crystal ZnO nanowires are synthesized and configured as field-effect transistors. Photoluminescence and photoconductivity measurements show defect-related deep electronic states giving rise to green-red emission and absorption. Photocurrent temporal response shows that current decay time is significantly prolonged in vacuum due to a slower oxygen chemisorption process. The photoconductivity of ZnO nanowires is strongly polarization dependent. Collectively, these results demonstrate that ZnO nanowire is a remarkable optoelectronic material for nanoscale device applications.

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High Mobility Thin Film Transistors with Transparent ZnO Channels

Cited by 283 publications

References 9 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

Photoluminescence and polarized photodetection of single ZnO nanowires

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High Mobility Thin Film Transistors with Transparent ZnO Channels

Cited by 283 publications

References 9 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm2/Vs

Photoluminescence and polarized photodetection of single ZnO nanowires

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Product

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Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs