We report that a layered iron-based compound LaOFeAs undergoes superconducting transition under doping with F- ions at the O2- site. The transition temperature (T c) exhibits a trapezoid shape dependence on the F- content, with the highest T c of ∼26 K at ∼11 atom %.

Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H) and organic semiconductors have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material--namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)--for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V(-1) s(-1), which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9 cm2 V(-1) s(-1), and device characteristics are stable during repetitive bending of the TTFT sheet.

Nature © Macmillan Publishers Ltd 1997the same direction. A zero value of H j indicates ferromagnetically coupled films. H j is known 7,14 to oscillate as a function of t because of the RKKY interaction. We can clearly distinguish two situations. In Fig. 4b (Cu spacer grown at room temperature) only a few oscillations take place, the oscillation with the short wavelength l being marginal. This is in contrast to the theoretical expectations 7 , which require l to dominate over Λ for geometrically perfect samples. On the other hand, when the Cu spacer is grown at low temperatures, more oscillations appear (Fig. 4c), and l dominates over Λ. We note that cooling a room-temperature-deposited wedge structure does not change the results given in Fig. 4b. Thus, lowtemperature deposition is essential to minimize thickness fluctuations. We also note that, in for example Fe/Cr multilayers, just the opposite occurs: the shortest-wavelength oscillation is favoured by high-temperature growth 15 .The smallest oscillations detected in this experiment correspond to an energy change of ϳ10 −8 eV per atom. This value represents a challenge both to first-principles calculations and to spectroscopies aimed at unveiling the electronic structure of solids. Moreover, although exceedingly small, this energy scale participates in deter-mining a macroscopic observable (in this case the threshold magnetic field H s ) and thus might play an important role in the design of metallic nanostructures for device application. Ⅺ

The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In-Ga-Zn-O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D) displays, which cannot be satisfied using conventional silicon and organic TFTs. The major insights of this review are summarized as follows. (i) Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. (ii) A sixth-generation (6G) process is demonstrated for 32″ and 37″ displays. (iii) An 8G sputtering apparatus and a sputtering target have been developed. (iv) The important effect of deep subgap states on illumination instability is revealed. (v) Illumination instability under negative bias has been intensively studied, and some mechanisms are proposed. (vi) Degradation mechanisms are classified into back-channel effects, the creation of traps at an interface and in the gate insulator, and the creation of donor states in annealed a-IGZO TFTs by the Joule heating; the creation of bulk defects should also be considered in the case of unannealed a-IGZO TFTs. (vii) Dense passivation layers improve the stability and photoresponse and are necessary for practical applications. (viii) Sufficient knowledge of electronic structures and electron transport in a-IGZO has been accumulated to construct device simulation models.

We report superconductivity in an iron-based layered oxy-pnictide LaOFeP. LaOFeP is composed of an alternate stack of lanthanum oxide (La3+O2-) and iron pnictide (Fe2+P3-) layers. Magnetic and electrical resistivity measurements verify the occurrence of the superconducting transition at approximately 4 K.

The iron- and nickel-based layered compounds LaOFeP (refs 1, 2) and LaONiP (ref. 3) have recently been reported to exhibit low-temperature superconducting phases with transition temperatures T(c) of 3 and 5 K, respectively. Furthermore, a large increase in the midpoint T(c) of up to approximately 26 K has been realized in the isocrystalline compound LaOFeAs on doping of fluoride ions at the O2- sites (LaO(1-x)F(x)FeAs). Experimental observations and theoretical studies suggest that these transitions are related to a magnetic instability, as is the case for most superconductors based on transition metals. In the copper-based high-temperature superconductors, as well as in LaOFeAs, an increase in T(c) is often observed as a result of carrier doping in the two-dimensional electronic structure through ion substitution in the surrounding insulating layers, suggesting that the application of external pressure should further increase T(c) by enhancing charge transfer between the insulating and conducting layers. The effects of pressure on these iron oxypnictide superconductors may be more prominent than those in the copper-based systems, because the As ion has a greater electronic polarizability, owing to the covalency of the Fe-As chemical bond, and, thus, is more compressible than the divalent O2- ion. Here we report that increasing the pressure causes a steep increase in the onset T(c) of F-doped LaOFeAs, to a maximum of approximately 43 K at approximately 4 GPa. With the exception of the copper-based high-T(c) superconductors, this is the highest T(c) reported to date. The present result, together with the great freedom available in selecting the constituents of isocrystalline materials with the general formula LnOTMPn (Ln, Y or rare-earth metal; TM, transition metal; Pn, group-V, 'pnicogen', element), indicates that the layered iron oxypnictides are promising as a new material platform for further exploration of high-temperature superconductivity.

Industrially, the artificial fixation of atmospheric nitrogen to ammonia is carried out using the Haber-Bosch process, but this process requires high temperatures and pressures, and consumes more than 1% of the world's power production. Therefore the search is on for a more environmentally benign process that occurs under milder conditions. Here, we report that a Ru-loaded electride [Ca(24)Al(28)O(64)](4+)(e(-))(4) (Ru/C12A7:e(-)), which has high electron-donating power and chemical stability, works as an efficient catalyst for ammonia synthesis. Highly efficient ammonia synthesis is achieved with a catalytic activity that is an order of magnitude greater than those of other previously reported Ru-loaded catalysts and with almost half the reaction activation energy. Kinetic analysis with infrared spectroscopy reveals that C12A7:e(-) markedly enhances N(2) dissociation on Ru by the back donation of electrons and that the poisoning of ruthenium surfaces by hydrogen adatoms can be suppressed effectively because of the ability of C12A7:e(-) to store hydrogen reversibly.

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.