Perovskite quantum dots (QDs) as a new type of colloidal nanocrystals have gained significant attention for both fundamental research and commercial applications owing to their appealing optoelectronic properties and excellent chemical processability. For their wide range of potential applications, synthesizing colloidal QDs with high crystal quality is of crucial importance. However, like most common QD systems such as CdSe and PbS, those reported perovskite QDs still suffer from a certain density of trapping defects, giving rise to detrimental nonradiative recombination centers and thus quenching luminescence. In this paper, we show that a high room-temperature photoluminescence quantum yield of up to 100% can be obtained in CsPbI perovskite QDs, signifying the achievement of almost complete elimination of the trapping defects. This is realized with our improved synthetic protocol that involves introducing organolead compound trioctylphosphine-PbI (TOP-PbI) as the reactive precursor, which also leads to a significantly improved stability for the resulting CsPbI QD solutions. Ultrafast kinetic analysis with time-resolved transient absorption spectroscopy evidence the negligible electron or hole-trapping pathways in our QDs, which explains such a high quantum efficiency. We expect the successful synthesis of the "ideal" perovskite QDs will exert profound influence on their applications to both QD-based light-harvesting and -emitting devices.

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We report photovoltaic performances of all-solid state Sn/Pb halide-based perovskite solar cells. The cell has the following composition: F-doped SnO2 layered glass/compact titania layer/porous titania layer/CH3NH3SnxPb(1-x)I3/regioregular poly(3-hexylthiophene-2,5-diyl). Sn halide perovskite itself did not show photovoltaic properties. Photovoltaic properties were observed when PbI2 was added in SnI2. The best performance was obtained by using CH3NH3Sn0.5Pb0.5I3 perovskite. 4.18% efficiency with open circuit voltage 0.42 V, fill factor 0.50, and short circuit current 20.04 mA/cm(2) are reported. The edge of the incident photon to current efficiency curve reached 1060 nm, which was 260 nm red-shifted compared with that of CH3NH3PbI3 perovskite solar cells.

The authors have demonstrated an approach to sensitized-type solar cells, based on TiO2 inverse opal and the use of CdSe quantum dots (QDs) as sensitizers. CdSe QDs were grown in situ on TiO2 inverse opal electrodes, utilizing a chemical bath deposition method. All of the photovoltaic performances, including short circuit photocurrent density, open circuit voltage, fill factor, and efficiency, were significantly improved by surface modification with ZnS and fluoride ions. A power conversion efficiency of about 2.7% has been attained, under solar illumination of 100mW∕cm2. This value is relatively high for metal oxide solar cells, sensitized with semiconductor QDs.

Solar cells based on a mesoporous structure of TiO2 and the polysulfide redox electrolyte were prepared by direct adsorption of colloidal CdSe quantum dot light absorbers onto the oxide without any particular linker. Several factors cooperate to improve the performance of quantum-dot-sensitized solar cells: an open structure of the wide bandgap electron collector, which facilitates a higher covering of the internal surface with the sensitizer, a surface passivation of TiO2 to reduce recombination and improved counter electrode materials. As a result, solar cells of 1.83% efficiency under full 1 sun illumination intensity have been obtained. Despite a relatively large short circuit current (J(sc) = 7.13 mA cm(-2)) and open circuit voltage (V(oc) = 0.53 V), the colloidal quantum dot solar cell performance is still limited by a low fill factor of 0.50, which is believed to arise from charge transfer of photogenerated electrons to the aqueous electrolyte.