Articles you may be interested inIndium surfactant effect on Al N ∕ Ga N heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions Appl. Phys. Lett. 88, 151902 (2006); 10.1063/1.2186971 Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy Appl. Phys. Lett.
Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al 0.25 Ga 0.75 N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.
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