Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE

Effects of growth pause on the structural and optical properties of InGaAsN–InGaAsP quantum well

“…4(c), the 3-s pause sample exhibits a large number of surface pits with an average configuration 0.8 mm in diameter and 3 nm in depth. A similar observation was also published by Baskar et al on a MOCVDgrown structure consisting of a 7 nm InGaAsN QW with GaAs pre-layer and cap layer [16], where they found that by carefully choosing growth conditions (growth temperature, DMHy flow), the density of surface pits could be greatly reduced. Here, we investigated the dependence of pit density on the growth pause annealing.…”