Precursors to Semiconducting Materials

Carmalt, Claire J.; Basharat, Siama

doi:10.1016/b0-08-045047-4/00166-7

Cited by 10 publications

(10 citation statements)

References 243 publications

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“…The mechanism for the deposition process was not investigated. However, it is assumed to proceed via decomposition processes reported previously for related systems [34]. The ethyl and R group from [Et 2 Ga(l-OR)] 2 are probably eliminated via b-hydride elimination when these complexes are pyrolyzed on or near the surface.…”

Section: Aerosol Assisted Chemical Vapor Depositionmentioning

confidence: 98%

Syntheses, X-ray structures and CVD studies of diorganoalkoxogallanes

Basharat¹,

Carmalt²,

Palgrave³

et al. 2008

Journal of Organometallic Chemistry

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Section: Aerosol Assisted Chemical Vapor Depositionmentioning

confidence: 98%

Syntheses, X-ray structures and CVD studies of diorganoalkoxogallanes

Basharat¹,

Carmalt²,

Palgrave³

et al. 2008

Journal of Organometallic Chemistry

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“…The metalorganic precursors traditionally employed are readily available commercially and have convenient vapour pressures. 50 Examples of single-source precursors include [Ga(As t Bu 2 ) 3 ], [Me 2 Ga(m-As t The use of single-source precursors to III-V thin films has been reviewed previously 52 and compounds of this type have been typically used to deposit films via MOCVD and low pressure CVD. The volatile group III trialkyls, such as trimethylaluminum (AlMe 3 ), trimethylgallium (GaMe 3 ), and trimethylindium (InMe 3 ) in combination with the group V hydride gases (ammonia, phosphine and arsine) result in III-V thin films that contain low-levels of intrinsic impurities, such as carbon.…”

Section: Groups 13 and 15 (Iii-v) Thin Filmsmentioning

confidence: 99%

Solution based CVD of main group materials

2016

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This critical review focuses on the solution based chemical vapour deposition (CVD) of main group materials with particular emphasis on their current and potential applications. Deposition of thin films of main group materials, such as metal oxides, sulfides and arsenides, have been researched owing to the array of applications which utilise them including solar cells, transparent conducting oxides (TCOs) and window coatings. Solution based CVD processes, such as aerosol-assisted (AA)CVD have been developed due to their scalability and to overcome the requirement of suitably volatile precursors as the technique relies on the solubility rather than volatility of precursors which vastly extends the range of potentially applicable compounds. An introduction into the applications and precursor requirements of main group materials will be presented first followed by a detailed discussion of their deposition reviewed according to this application. The challenges and prospects for further enabling research in terms of emerging main group materials will be discussed.

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“…[12] Indeed, group 15 organoprecursors have demonstrated themselves as successful alternatives to the group 15 hydrides in the deposition of a variety of phosphorus compounds. [13] Recently we reported the first dual-source deposition of TiP films on glass substrates by the APCVD reaction of TiCl 4 with tBuPH 2 , [14] from the reaction of TiCl 4 with a variety of primary phosphanes (RPH 2 where R = Ph, tBu and Cy hex ) [15] and from the reaction of [Ti(NMe 2 ) 4 ] with Cy hex PH 2 . [16] Thereafter, we extended the methodology to deposit GeP using both primary and secondary phosphanes, [17,18] and also to deposit NbP, [19] TaP, [20] CrP, [21] MoP [22] and VP thin films.…”

Section: Introductionmentioning

confidence: 99%

“…GaAs films were successfully deposited by metal-organic (MO)CVD methods using tBuAsH 2 , with the deposited films comparable in both quality and surface morphology to those previously achieved using AsH 3 . [13,31] Therefore, utilising organoarsenic precursors for the deposition of transition metal arsenides was expected to result in the successful formation of metal arsenide films.…”

Section: Introductionmentioning

confidence: 99%