Crystal growth of high quality hybrid GaAs heteroepitaxial layers on Si substrate by metalorganic chemical vapor deposition and liquid phase epitaxy

Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping

“…Among those approaches, epitaxial growth of GaAs on Si has been the most extensively investigated subject. Although some progress has been reported [1][2][3], device quality of GaAs on Si has not materialized at the commercial level due to large mismatch in lattice constants and thermal expansion coefficients between GaAs and Si. Considering the actual material growth cost and the processing limit in practically realizing optoelectronic integrated circuits (OEIC) on Si substrates, growth of high-quality GaAs with minimal transitional buffer layer thickness on exact oriented (0 0 1) Si substrate platform is desired.…”