Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic–photoelectrolysis cells

A comparison of PV/electrolyser and photoelectrolytic technologies for use in solar to hydrogen energy storage systems

“…The structure could be a double or triple junction cell, such as a-Si/a-Si:Ge and would be similar to the amorphous Si based multijunction device described in section 3.1.3, in terms of a lower efficiency but also lower cost. In each case the structure would be such that the T i O 2 with modified properties not requiring a bias: either by dye sensitisation [16]; perhaps with an additional WO 3 cell [31]; or by modification of the titania surface to reduce its band gap, either non-stoichiometrically or by alloying [30] ∼ 4.6 [16,31,30] high band gap material forms the PE part of the cell in contact with water with the band gap of the materials decreasing for the PV cells connected in series underneath it [25,27,28]. (Hence, in these cases either GaInP/GaAs/Ge or a-Si/a-Si:Ge.…”

Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

“…8 The supersaturation can be tuned at the substrate through control of the temperature gradient, facilitating selected-area epitaxy and epitaxial layer overgrowth (ELO) on Si substrates. 12,13 These features could potentially enable growth of high-quality GaAs lms with large grains 14 on thermally/lattice-mismatched 15,16 or ceramic 17 substrates. This is signicant because in order to successfully utilize GaAs for terrestrial PV applications, in addition to developing an efficient growth technique, the substrate must either be inexpensive or reusable (e.g.…”

Epitaxy for Energy Materials

“…Direct integration of III-V compound semiconductors on large-diameter, cheaper, and readily available Si substrate is therefore highly desirable for low-cost and lightweight photovoltaics, which justifies the great deal of research in this field [28][29][30]. Commercially available GaAs and Ge substrates are smaller in diameter and much more expensive than Si.…”