Heteroepitaxial technologies on Si for high-efficiency solar cells

Soga, Tetsuo; Baskar, K.; Jimbo, Takashi

doi:10.1016/s0927-0248(96)00149-3

Cited by 23 publications

(19 citation statements)

References 15 publications

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“…By substituting the top cells with higher efficiency GaInP/InGaAs top cells such as those reported in [19] with 29.5% efficiency, and by employing the previous two optimizations for the optical loss and the bottom Si cells, the GaInP/InGaAs/Si 3J solar cell efficiencies would be able to increase to above 33% at 1-sun. 4) Characterizing and optimizing the 3J solar cell under concentrated illumination. We expect the cell to achieve even higher efficiencies at low to moderate concentrated illumination due to the anticipated increase in V oc under concentration.…”

Section: Future Workmentioning

confidence: 99%

“…However, the 4.1% lattice mismatch between GaAs and Si has made it difficult to obtain high quality GaAs-based films on Si by epitaxial growth. The most successful attempt was made by Umeno et al more than a decade ago, who reported an AlGaAs-on-Si 2-Junction (2J) solar cell with 21.2% efficiency [4]. In order to achieve higher efficiency, new approaches need to be explored.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of High-Efficiency III–V on Silicon Multijunction Solar Cells by Direct Metal Interconnect

Yang

Peng

Cheong

et al. 2014

IEEE J. Photovoltaics

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This paper presents a novel direct-metal-interconnect hybrid integration method for the fabrication of low cost and highefficiency multijunction solar cells without being constrained by lattice matching requirements. It also incorporates the areal current matching technique that is essential in mitigating the adverse effects of current limiting by the Si subcell to achieve maximum possible efficiency. A GaInP/InGaAs/Si triple-junction solar cell has been demonstrated, with a 2-terminal estimated efficiency of 25.5% tested under a filtered Xe arc lamp with the light intensity set to 100 mW/cm 2 . The cell shows promising thermal reliability, as well as potential for operation under concentrated illumination.Index Terms-Current matching, III-V on Si, multijunction (MJ) solar cell, photovoltaic (PV), solar spectrum.

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Section: Future Workmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication of High-Efficiency III–V on Silicon Multijunction Solar Cells by Direct Metal Interconnect

Yang

Peng

Cheong

et al. 2014

IEEE J. Photovoltaics

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“…5 To make PV modules with higher efficiency than market-leading c-Si while leveraging existing c-Si manufacturing capacity, Si-based tandem approaches have been proposed. [6][7][8][9][10] The top sub-cell in a silicon-based tandem should have a band gap between 1.6 and 1.9 eV. 11 However, very few materials exhibit high open-circuit voltages (V OC ) within this band gap range.…”

mentioning

confidence: 99%

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

Mailoa

Bailie

Johlin

et al. 2015

Applied Physics Letters

529

447

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With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. We achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

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“…Another option is to realize a GaP nucleation followed by a buffer of Ga 1-x In x P or GaAs x P 1-x (e.g., [23,25]). GaAs, GaInP, and AlGaAs solar cells on Si substrates have already been realized (e.g., [24,26,27]). Recently, a GaInP/ GaAs dual-junction solar cell on inactive Si with a Ga(As)P buffer achieved an efficiency of 16.4% under AM1.5g [28].…”

Section: Upright Metamorphic Growth Of Iii-v On Simentioning

confidence: 99%

III-V Multi-junction solar cells and concentrating photovoltaic (CPV) systems

Philipps

Bett

2014

Advanced Optical Technologies

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It has been proven that the only realistic path to practical ultra-high efficiency solar cells is the monolithic multi-junction approach, i.e., to stack pn-junctions made of different semiconductor materials on top of each other. Each sub pn-junction, i.e., sub solar cell, converts a specific part of the sun's spectrum. In this way, the energy of the sunlight photons is converted with low thermalization losses. However, largearea multi-junction solar cells are still far too expensive if applied in standard PV modules. A viable solution to solve the cost issue is to use tiny solar cells in combination with optical concentrating technology, in particular, high concentrating photovoltaics (HCPV), in which the light is concentrated over the solar cells more than 500 times. The combination of ultra-high efficient solar cells and optical concentration lead to low cost on system level and eventually to low levelized cost of electricity, today, well below 8 �cent/kWh and, in the near future, below 5 �cent/kWh. A wide variety of approaches exists for III-V multi-junction solar cells and HCPV systems. This article is intended to provide an overview about the different routes being followed.

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Heteroepitaxial technologies on Si for high-efficiency solar cells

Cited by 23 publications

References 15 publications

Fabrication of High-Efficiency III–V on Silicon Multijunction Solar Cells by Direct Metal Interconnect

Fabrication of High-Efficiency III–V on Silicon Multijunction Solar Cells by Direct Metal Interconnect

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

III-V Multi-junction solar cells and concentrating photovoltaic (CPV) systems

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