Recently, ferroelectric tunnel junctions (FTJs) have gained extensive attention as possible candidates for emerging memory and synaptic devices for neuromorphic computing. However, the working principles of the FTJ remain controversial...

The effects of various annealing temperatures (350-550 C) of Au nanoparticles (NPs) on the surface-plasmon enhanced p-Si/n-ZnO nanorods (NRs) heterojunction photodetectors (HPDs) have been investigated. The photoresponse of the surface-plasmon-mediated HPDs was found to be determined by the extinction band of the Au NPs, the defects of ZnO NRs, and the Schottky-barrier height (SBH) between the Au and ZnO interface. The higher annealing temperature (550 C) causes more defects in ZnO NRs and lowers the ultraviolet (UV) response of the fabricated p-Si/n-ZnO NRs HPDs. The higher annealing temperature also renders a rougher surface in the Au NPs, thereby leading to destructive interference and hence the narrowest extinction band. In contrast, the modest temperature (450 C) results in fewer defects in ZnO NRs, the widest extinction band in Au NPs, and the lowest SBH at the Au/ZnO interface. Such a result enhances the UV-to-visible rejection ratio from 439.6 to 6447 as compared to the HPDs without Au NPs. A band diagram considering the above investigations is illustrated to elucidate the surface plasmon resonance effects on enhancing the UV response. V

High-performance solar-blind separate absorption and multiplication avalanche photodiodes (SAM-APDs) were fabricated based on a p-NiO/MgO/n-ZnO dual heterojunction structure. The prepared SAM-APDs exhibited a separated absorption and multiplication structure that used NiO and ZnO as absorption layers, and ultrawide-bandgap MgO as a multiplication layer. When the reverse-bias voltage exceeded 6 V, carrier avalanche multiplication occurred, and the avalanche gain reached a high value of 2.7 × 103, corresponding to a 1120% quantum efficiency, at a reverse-bias voltage of 10 V. These solar-blind SAM-APDs had an ultraviolet (UV) (310 nm)/visible (500 nm) rejection ratio as high as 563.6 at a 2 V reverse-bias voltage. These features render the SAM-APDs highly suitable for practical applications as UV solar-blind photodetectors.

In this study, an organic poly(N-vinylcarbazole) (PVK) layer was inserted between the p-NiO and n-ZnO inorganic layers and the p-NiO/PVK/n-ZnO organic/inorganic hybrid ultraviolet heterojunction photodiode (PD) was fabricated.

Infrared laser has been used to irradiate carbon nanotube (CNT) powders and the performance of CNT emitter was enhanced. The CNTs were prepared by conventional electric arc discharge method and laser irradiation was processed by Nd:YAG infrared laser with a wavelength of 1064nm. It was found that the turn-on electric field was significantly decreased for laser treated sample. As compared to the sample of no laser treatment, the emission current density was enhanced by a magnitude of 16.56 for 225J∕cm2 treated plus annealing one. Possible mechanism is discussed here.

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To study plasma-induced damages, we directly sputtered indium-tin-oxide ͑ITO͒ films onto p-GaN and systematically studied the effects of sputter power on the electrical properties of ITO/p-GaN. It was found that plasma bombardment during sputtering will induce nitrogen vacancies and compensate acceptor concentration in p-GaN or even convert p-GaN into n-GaN. It was also found that annealing the samples at 600 and 700°C will generate more nitrogen vacancies and enhance rectifying behavior. Furthermore, it was found that 800°C annealing could effectively recover the plasma-induced nitrogen vacancies and/or traps.