Patients with severe trauma transported by private means in this setting have better survival than those transported via the EMS system. Large prospective studies are needed to identify the factors responsible for this difference.
The solid-liquid-solid growth mechanism of synthesizing SiOx nanowires is expressed in detail through analyzing the structure and composition of the catalysts and the nanowires. The silicon source for growing nanowires was directly provided from the silicon wafer. A thin catalyst layer of platinum (∼5nm) was first deposited on the silicon wafer by sputtering. The platinum film collapsed into dots with diameter about hundreds of nanometers during the thermal process. These dots transformed into crystalline platinum silicide (Pt3Si) and served as nucleation seeds for the silicon oxide nanowire growth. Due to the high process temperature (∼1100°C) and long duration time (∼5h), the silicon wafer transformed into amorphous silicon oxides and melted into the Pt3Si catalyst dots until supersaturated to form SiOx nanowires. Such nanowires are amorphous and have an average diameter of about 40–60 nm and length of several hundreds of micrometers.
A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget ( 700 C) of the conventional Ni salicidation by forming Ni(Pt)Si. The addition of Pt has enhanced the thermal stability of NiSi. Improved sheet resistance of the salicided narrow poly-Si and active lines was achieved up to 750 C and 700 C for as-deposited Ni(Pt) thickness of 30 nm and 15 nm, respectively. This successfully extends the rapid thermal processing (RTP) window by delaying the nucleation of NiSi 2 and agglomeration. Implementation of Ni(Pt) alloyed silicidation was demonstrated on PMOSFETs with high drive current and low junction leakage.
The use of Raman spectroscopy to characterize strain in strained Si and strained SiGe has been widely accepted. To use Raman spectroscopy for quantitative biaxial strain measurements, the strain shift coefficient for Si-Si vibration from strained Si (b StSi Si{Si ) and strained SiGe (b StSiGe Si{Si ) must be known. So far, b StSiGe Si{Si is commonly used to calculate strain in strained Si, which may result in inaccurate strain values. In this work, we report the first direct measurement of b StSi Si{Si by correlating highresolution X-ray diffraction and Raman spectroscopy, which yields a measured value of À784 AE 4 cm À1 . We also show that the strain shift coefficient of SiGe, b StSiGe Si{Si , is a strong function of Ge concentration (x), and follows the empirical relation: b ¼ À773:9 À 897:7x for x < 0:35.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.