Determination of Raman Phonon Strain Shift Coefficient of Strained Silicon and Strained SiGe

Wong, Lydia Helena; Wong, Chee Cheong; Liu, J. P.; Sohn, Dong Kyun; Chan, L.; Hsia, L. C.; Zang, H.; Ni, Zhenhua; Shen, Zexiang

doi:10.1143/jjap.44.7922

Cited by 50 publications

(46 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where b is so-called the b coefficient which is used for the evaluation of isotropic biaxial strain biaxial in strained Si substrates using the Raman wavenumber shift of the LO phonon mode 3 [21,47]. Various PDPs have so far been suggested by many researchers.…”

Section: Methodology Of Measurements For Anisotropic Biaxial Stress Smentioning

confidence: 99%

Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Kosemura¹,

Tomita²,

Usuda³

et al. 2012

Advanced Aspects of Spectroscopy

View full text Add to dashboard Cite

Section: Methodology Of Measurements For Anisotropic Biaxial Stress Smentioning

confidence: 99%

Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Kosemura¹,

Tomita²,

Usuda³

et al. 2012

Advanced Aspects of Spectroscopy

View full text Add to dashboard Cite

“…The strain in the Si was directly calculated by observing the shift of a strong Raman peak near 520 cm − 1 . 30,31 Figure 3a presents the contour mapping image of Raman shift for unstrained Si on an unetched region and a strained, suspended Si ribbon that displays a clearly distinguished, uniform strain distribution on two regions. Raman peaks of unstrained Si and strained Si were observed at 520.46 and 517.98 cm − 1 , respectively.…”

Section: Resultsmentioning

confidence: 99%

Mobility enhancement of strained Si transistors by transfer printing on plastic substrates

et al. 2016

View full text Add to dashboard Cite

Strain engineering has been utilized to overcome the limitation of geometric scaling in Si-based thin-film transistor (TFT) technology by significantly improving carrier mobility. However, current strain engineering methods have several drawbacks: they generate atomic defects in the interface between Si and strain inducers, they involve high-cost epitaxial depositions and they are difficult to apply to flexible electronics with plastic substrates. Here, we report the formation of a strained Si membrane with oxidation-induced residual strain by releasing a host Si substrate of a silicon-on-insulator (SOI) wafer. The construction of the suspended Si/SiO 2 structures induces 40.5% tensile strain on the top Si membrane. The fabricated TFTs with strained Si channels are transferred onto plastics using a roll-based transfer technique, and they exhibit a mobility enhancement factor of 1.2-1.4 compared with an unstrained Si TFT.

show abstract

“…SiGe ratios for the GS-MBE and sputtered samples are calculated to be 0.23 and 0.19, respectively, using Á" Si = RÁx(cGe-cSi)/cSi, where cSi and cGe are the lattice constants of relaxed Ge and Si, respectively, and R values are 0.49 for the GS-MBE sample and 0.39 for the sputtered sample, as described in the experimental section above; a ¼ 68 cm À115) and b Si ¼ À784 cm À1 . 16) If the fluctuation Á! Si is related only to the underlying strain fluctuation (i.e., Áx ¼ 0), the Á!…”

Section: -5)mentioning

confidence: 99%

Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy

Hanafusa

Hirose

Kasamatsu

et al. 2011

Appl. Phys. Express

View full text Add to dashboard Cite

Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si 1Àx Ge x -layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system, clarify that an s-Si sample formed by our previously proposed sputter epitaxy method has a smoother and more uniformly strained surface than an s-Si sample formed by gas-source molecular beam epitaxy. The TERS analyses suggest that the compositional fluctuation of the underlying Si 1Àx Ge x buffer layer is largely related to the weak s-Si strain fluctuation of the sputtered sample. # 2011 The Japan Society of Applied Physics E lectron and hole mobilities in Si are enhanced by the introduction of strain. Biaxial global-strain-type strained Si (s-Si) formed on a Si 1Àx Ge x strain-relief relaxed buffer has been intensively applied to high-electronmobility transistors such as modulation-doped field-effect and metal-oxide-semiconductor transistors. [1][2][3][4][5] However, when we form global-strain-type s-Si by currently used gas-source methods such as gas-source molecular beam epitaxy (GS-MBE) and chemical vapor deposition (CVD), a crosshatch undulation pattern is generally formed on the surface with an undulation pitch of typically less than 1 m.6) This surface undulation causes a nonuniform strain distribution 7) and variations in the physical properties and device performance on the surface. This is a serious issue to be solved for smaller and higher-density devices.Recently, we have proposed a stepwise quadrupleSi 1Àx Ge x -layer buffer (QL buffer) as a strain-relief relaxed buffer.8) A smoother s-Si surface has been obtained on the QL buffer by our proposed sputter epitaxy method, which uses a combination of ultrahigh-vacuum-compatible magnetron sputtering and an Ar/H 2 mixture working gas, than by GS-MBE. 9) Therefore, this s-Si surface formed by our sputter epitaxy method is expected to have a more uniform strain distribution.Raman spectroscopy is one of the useful techniques for evaluating the surface strain distribution; however, its conventional spatial resolution is limited to about 1 Â 1 m 2 due to the diffraction limit and it is difficult to evaluate the s-Si surface strain distribution with an undulation pitch of .1 m.To obtain a higher spatial resolution, we have applied a near-field and plasmon oscillation coupling method 10,11) and introduced a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system for simultaneous measurements of surface topography and the enhanced Raman shift spectrum for an s-Si surface. So far, there has been one report, using a similar AFM-TERS system, on strain variation at the nanometer scale within a 1.4 m crosshatch segment on the s-Si surface on a Si 1Àx Ge x graded buffer. 11)In this paper, using the AFM-TERS method, we first report the relationship between the surface roughness and the strain distribution, on the nanometer scale, of strained Si on the stepwise QL bu...

show abstract

Determination of Raman Phonon Strain Shift Coefficient of Strained Silicon and Strained SiGe

Cited by 50 publications

References 21 publications

Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Mobility enhancement of strained Si transistors by transfer printing on plastic substrates

Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy

Contact Info

Product

Resources

About