Nitride-based p-in ultraviolet (UV) photodetectors with a low-temperature (LT) GaN interlayer were proposed and fabricated. Compared with a conventional GaN p-in photodetector, it was found that both the dark current and ideality factor of the p-in photodetector with an LT-GaN interlayer became larger whereas the UV-to-visible rejection ratio became smaller because of the poor crystal quality of the LT-GaN interlayer. However, the responsivity of the GaN p-in photodetector with an LT-GaN interlayer was larger than that of the conventional GaN p-in photodetector under a high reverse bias because of the carrier multiplication effect and/or internal gain that originated from the defect levels.
To study plasma-induced damages, we directly sputtered indium-tin-oxide ͑ITO͒ films onto p-GaN and systematically studied the effects of sputter power on the electrical properties of ITO/p-GaN. It was found that plasma bombardment during sputtering will induce nitrogen vacancies and compensate acceptor concentration in p-GaN or even convert p-GaN into n-GaN. It was also found that annealing the samples at 600 and 700°C will generate more nitrogen vacancies and enhance rectifying behavior. Furthermore, it was found that 800°C annealing could effectively recover the plasma-induced nitrogen vacancies and/or traps.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.