Sputtered Indium-Tin-Oxide on p-GaN

Chang, Shoou‐Jinn; Lan, C. H.; Hwang, Joon; Cheng, Yung‐Chen; Lin, Wen Jen; Lin, Jian-Cheng; Chen, Hone-Zem

doi:10.1149/1.2820626

Cited by 10 publications

(4 citation statements)

References 31 publications

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“…12 The discrepancy may be partly attributed to surface damage induced by plasma during the initial stage of sputtering deposition. 21 As also seen in Fig. 4, when the annealing temperature is increased to 800°C, a sharp increase in contact resistance is observed, especially for the Ni/ITO contact.…”

Section: Resultssupporting

confidence: 69%

Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

Guo

Andagana

Cao

2010

Journal of Elec Materi

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Indium tin oxide (ITO) thin films doped with Au, Ni, or Pt (3.5 at.% to 10.5 at.%) were deposited on p-GaN epilayers (Mg $4 9 10 19 cm À3 ) using direct-current (DC) sputter codeposition. It was found that undoped ITO contacts to p-GaN exhibited leaky Schottky behavior, whereas the incorporation of a small amount of Au (3.5 at.% to 10.5 at.%) significantly improved their ohmic characteristics. Compared with standard Ni/ITO contacts, the Au-doped ITO contacts had a similar specific contact resistance in the low 10 À2 X cm À2 range, but were more stable above 600°C and more transparent at blue wavelengths. These results provide support for the use of Au-doped ITO ohmic contact to p-type GaN in high-brightness blue light-emitting diodes.

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Section: Resultssupporting

confidence: 69%

Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

Guo

Andagana

Cao

2010

Journal of Elec Materi

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“…The g m-max for samples C, D and E were 132, 147 and 160 mS/mm, respectively. The highest g m-max of sample E indicated that the mobility is highest among the three samples, which is possibly because, for sample E, the low electron density and no sputtering-induced surface damage [32] suppress the electron scattering. curve.…”

Section: Resultsmentioning

confidence: 93%

“…curve. I G-off on the order of 10 mA/mm for sample A is more than one order of magnitude larger than that of sample B (10 −1 mA/mm), which is possibly due to the higher sputter-induced shallow donor-like N vacancies [32][33][34] and much more N equ for oxide deposited at lower substrate temperature. I G-off for sample C is in the order of 10 −2 mA/mm, which is also one order of magnitude larger than that for sample D (10 −3 mA/mm).…”

Section: Resultsmentioning

confidence: 99%

Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors

Tan¹,

Egawa²

2019

J. Semicond.

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AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) on a silicon substrate were fabricated with silicon oxide as a gate dielectric by sputtering deposition and electron-beam (EB) evaporation. It was found that the oxide deposition method and conditions have great influences on the electrical properties of HEMTs. The low sputtering temperature or oxygen introduction at higher temperature results in a positive equivalent charge density at the oxide/AlGaN interface (N equ ), which induces a negative shift of threshold voltage and an increase in both sheet electron density (n s ) and drain current density (I D ). Contrarily, EB deposition makes a negative N equ , resulting in reduced n s and I D . Besides, the maximum transconductance (g m-max ) decreases and the off-state gate current density (I G-off ) increases for oxides at lower sputtering temperature compared with that at higher temperature, possibly due to a more serious sputter-induced damage and much larger N equ at lower sputtering temperature. At high sputtering temperature, I G-off decreases by two orders of magnitude compared to that without oxygen, which indicates that oxygen introduction and partial pressure depression of argon decreases the sputter-induced damage significantly. I G-off for EB-evaporated samples is lower by orders of magnitude than that of sputtered ones, possibly attributed to the lower damage of EB evaporation to the barrier layer surface.

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“…9892 98920Y-7 and ITO, making it difficult for the contact to survive the high current densities required in VCSELs (typically tens of kA/cm 2 ). ITO deposition, usually done by sputtering to achieve high quality 115 , can easily lead to plasma damage of the p-GaN 116,117 , preventing a low-resistive contact to be formed. Remote plasma deposition or physical vapor deposition such as electron beam evaporation can be used to avoid plasma damage of the p-GaN.…”

mentioning

confidence: 99%

Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm 2 . The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

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Sputtered Indium-Tin-Oxide on p-GaN

Cited by 10 publications

References 31 publications

Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors

Progress and challenges in electrically pumped GaN-based VCSELs

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