Post oxidation in improving the Schottky-gate MgZnO/ZnO heterojunction field-effect transistors fabricated by RF sputtering

Hwang, Joon; Chu, Chung Min

doi:10.1016/j.mseb.2021.115063

Cited by 9 publications

(5 citation statements)

References 57 publications

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“…Recently, MgZnO/ZnO heterostructures received significant attention as a substantial subset of semiconductor junctions since ZnO materials are having fascinating properties such as low growth temperature, high exciton binding energy, higher saturation velocity, lower lattice mismatch, accessibility of large-area ZnO substrates, and relatively low material costs. Therefore, MgZnO/ZnO heterostructure based devices are used in various applications like thin film transistor (TFT) [30], photodetector [31], FET [32], light waveguide [33], etc However, to the Authors knowledge, no work on the HEMT has been reported as evident in the literature explaining the graded MgZnO/ZnO HEMT for biosensor applications. In contrast to traditional abrupt MgZnO/ZnO heterostructures, the graded MgZnO/ZnO heterostructure region can exhibit stronger 2-DEG formation at its interface [34].…”

Section: Introductionmentioning

confidence: 99%

Device optimization and sensitivity analysis of a double-cavity graded MgZnO/ZnO MOSHEMT for biomolecule detection

Pandey,

Dwivedi

et al. 2024

Phys. Scr.

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The detailed analytical model of biosensing parameters are proposed for a double-cavity graded MgZnO/ZnO metal oxide semiconductor high electron mobility transistor (MOSHEMT) with cap layer-based biosensor including transfer characteristic, output characteristic, change in cut-off voltage (ΔVoff), transconductance (gm), sensitivity, and selectivity. A thorough investigation of dielectric modulation in a double nanogap cavity under the gate was conducted with a focus on improving the sensing characteristics of a MOSHEMT to indicate the presence of biomolecules like Uricase, Streptavidin, Protein, and ChOx. The dielectric modulation and the Poisson equation were used to determine the effective capacitance and cut-off voltage in the cavity region. Consequently, the changes in the cut-off voltage and the drain current of the device were used as the sensing metrics for the detection of biomolecules in the cavity regions. It was found that the proposed graded MgZnO/ZnO MOSHEMT-based biosensor demonstrates a higher change in cut-off voltage and drain current in comparison to the previous works, suggesting higher sensitivity for biomolecules.

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Section: Introductionmentioning

confidence: 99%

Device optimization and sensitivity analysis of a double-cavity graded MgZnO/ZnO MOSHEMT for biomolecule detection

Pandey,

Dwivedi

et al. 2024

Phys. Scr.

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“…Among them, due to the lack of insulation layer capacitance, the junction FET (JFET) requires low gate driving power, a simple preparation process, and can achieve smaller device size. At present, there have been many studies on ZnO-based FETs [ 22 , 23 , 24 , 25 , 26 , 27 ], but most of them are the metal-oxide-semiconductor FETs (MOSFETs) or metal-semiconductor FETs (MESFETs), and there is less theoretical and experimental research on ZnO-based JFETs [ 28 , 29 ]. In 2019, Nan Guo et al prepared a light-driven WSe 2 -ZnO JFET with n-ZnO nanosheets as the gate material, and the device’s optical response reached 4.83 × 10 3 A/W, with a response time of 10 μs [ 29 ].…”

Section: Introductionmentioning

confidence: 99%

Piezotronic and Piezo-Phototronic Effects-Enhanced Core–Shell Structure-Based Nanowire Field-Effect Transistors

Liu

Peng

Zhu³

et al. 2023

Micromachines

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Piezotronic and piezo-phototronic effects have been extensively applied to modulate the performance of advanced electronics and optoelectronics. In this study, to systematically investigate the piezotronic and piezo-phototronic effects in field-effect transistors (FETs), a core–shell structure-based Si/ZnO nanowire heterojunction FET (HJFET) model was established using the finite element method. We performed a sweep analysis of several parameters of the model. The results show that the channel current increases with the channel radial thickness and channel doping concentration, while it decreases with the channel length, gate doping concentration, and gate voltage. Under a tensile strain of 0.39‰, the saturation current change rate can reach 38%. Finally, another core–shell structure-based ZnO/Si nanowire HJFET model with the same parameters was established. The simulation results show that at a compressive strain of −0.39‰, the saturation current change rate is about 18%, which is smaller than that of the Si/ZnO case. Piezoelectric potential and photogenerated electromotive force jointly regulate the carrier distribution in the channel, change the width of the channel depletion layer and the channel conductivity, and thus regulate the channel current. The research results provide a certain degree of reference for the subsequent experimental design of Zn-based HJFETs and are applicable to other kinds of FETs.

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“…6,10,11 Sasa et al, 12 Koike et al, 13 and Ye et al 14 have realized high-quality epitaxially grown MgZnO/ZnO (MZO) based HFET. Moreover, reports of realizing high 2DEG yielding sputtered 6,9,15,16 MZO heterostructures are available in the literature, suggesting the possibility of achieving large-area and therefore, low-cost ZnO-based power HFETs.…”

Section: Introductionmentioning

confidence: 99%

Analytical study of MgZnO/ZnO heterostructure field effect transistor for power switching

Kumar

Chaudhary

Khan³

et al. 2022

Int J Numerical Modelling

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We investigate the power switching mechanism to evaluate the power loss (PD) and efficiency (ɳ) in MgZnO/ZnO (MZO)‐based power heterostructure field effect transistor (HFET), and physical parameters responsible for PD in molecular beam epitaxy (MBE) and dual ion beam sputtering (DIBS) grown MZO HEFT and compare the performance with the group III‐nitride HFETs. This work extensively probes all physical parameters such as two‐dimensional electron gas (2DEG) density, mobility, switching frequency, and device dimension to study their impact on power switching in MZO HFET. Results suggest that the MBE and DIBS grown MZO HFET with the gate width (WG) of ~205 and ~280 mm at drain current coefficient (k) of 11 and 15, respectively, will achieve 99.96% and 99.95% of ɳ and 9.03 and 12.53 W of PD, respectively. Moreover, WG value for DIBS‐grown MZO HFET is observed to further reduce in the range of 112–168 mm by using a Y2O3 spacer layer leading to the maximum ɳ in the range of 99.98%–99.97% and the minimum PD in the range of 5–7 W. This work is significant for the development of cost‐effective HFETs for power switching applications.

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Post oxidation in improving the Schottky-gate MgZnO/ZnO heterojunction field-effect transistors fabricated by RF sputtering

Cited by 9 publications

References 57 publications

Device optimization and sensitivity analysis of a double-cavity graded MgZnO/ZnO MOSHEMT for biomolecule detection

Device optimization and sensitivity analysis of a double-cavity graded MgZnO/ZnO MOSHEMT for biomolecule detection

Piezotronic and Piezo-Phototronic Effects-Enhanced Core–Shell Structure-Based Nanowire Field-Effect Transistors

Analytical study of MgZnO/ZnO heterostructure field effect transistor for power switching

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