We have investigated photoassociative formation of RbCs molecules in the (2) 3 excited state correlated to v = 8, (5)0 + vibrational level in detail. The metastable ground-state RbCs molecules formed by spontaneous decay are ionized by pulsed dye laser through resonance-enhanced two-photon ionization. A rate equation of the photoionization process is introduced to explain the dependence of RbCs + molecular ion intensity on the ionization laser intensity. The saturation effect of molecular ion intensity appears as the photoassociation laser intensity increases. The rotational constant and centrifugal distortion constant are derived to be 0.01304 cm −1 and 0.000015 cm −1 from the photoassociation spectrum with a high sensitivity, respectively. The measured electric dipole moment of the observed (2) 3 state RbCs molecules is 4.7(6) D by Stark effect in static electric field.

We present a simple, reliable, and nondestructive method for the measurement of vacuum pressure in a magneto-optical trap. The vacuum pressure is verified to be proportional to the collision rate constant between cold atoms and the background gas with a coefficient k, which can be calculated by means of the simple ideal gas law. The rate constant for loss due to collisions with all background gases can be derived from the total collision loss rate by a series of loading curves of cold atoms under different trapping laser intensities. The presented method is also applicable for other cold atomic systems and meets the miniaturization requirement of commercial applications.

We theoretically demonstrate the influence of dark and bright states on vacuum Rabi splitting (VRS) and optical bistability (OB) of the multi-wave-mixing (MWM) process in a collective four-level atomic-cavity coupling system. We numerically investigate the multidressed VRS and OB behavior of the zero-and high-order transmitted cavity modes of MWM signals. A further study demonstrates that VRS and self-Kerr nonlinearity OB can coexist and compete with each other in a cascade relationship, based on which we achieve the goal to control VRS and OB simultaneously through the dark state in the atomic system.

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We achieve laser frequency stabilization by a simple technique based on sub-Doppler dichroic atomic vapor laser lock (DAVLL) in atomic cesium. The technique that combines saturated-absorption spectroscopy and Zeeman splitting of hyperfine structures allows us to obtain a modulation-free dispersion-like error signal for frequency stabilization. For the error signal, the dependence of peak-to-peak amplitude and the slope at the zero-crossing point on the magnetic field is studied by simulation and experiment. Based on the result, we obtain an available sub-Doppler DAVLL error signal with high sensitivity to the frequency drift by selecting an appropriate strength of the magnetic field. Ultimately, the fluctuation of the locked laser frequency is confined to below 0.5 MHz in a long term, exhibiting efficient suppression of frequency noise.

We theoretically study the Talbot effects resulted from the four-wave mixing and six-wave mixing signals, which are periodically modulated due to the coherence control effect. Corresponding to different dressing states, the enhancement and suppression conditions that will affect the properties of the multiwave mixing signals are also discussed in detail. Such proposal can be useful in all-optical-controlled pattern formation and propagation of light.Comment: 9 pages, 8 figure

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

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