Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

Abstract

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

Bidirectional optical signal transmission between two identical devices using perovskite diodes

“…Bidirectional optical signal transmission typically requires two sets of optical transmitters and receivers. However, integrating the functionalities of transmitter and receiver into one device, and creating bidirectional optical signal transmission between two identical devices, is important for miniaturized and monolithic optoelectronic systems 1 , 2 . Such dual-functional devices have previously been fabricated with III–V semiconductors 1 , 2 , but their creation using solution-processed semiconductors is of particular interest due to their lightweight, mechanical flexibility, and simple integration with complementary metal–oxide–semiconductor (CMOS) technology 3 – 7 .…”

Bidirectional mid-infrared communications between two identical macroscopic graphene fibres

“…Creating bidirectional MIR communication systems using two identical devices facilitates the design of simplified MIR-based optoelectronic systems. Such conceptual advances have been witnessed in visible and near-infrared regions, but not yet in the MIR range 7 , 8 . This is because the majority of traditional MIR detectors and emitters, e.g., narrow-band gap semiconductors 9 , 10 , are predominantly designed to be either emitters or detectors, and, therefore, are not compatible for dual-functionality with satisfactory performance.…”

An Ultraviolet Sensor and Indicator Module Based on p–i–n Photodiodes

“…Li et al reported the monolithic integration of photodiodes, LEDs, and waveguides for applications in visible light communication [30,31]. Wang et al conducted in-plane data transmission among a transmitter (LED), waveguide, and receiver (photodiode) [32,33]. Liu et al reported the monolithic integration of high electron mobility transistors, LEDs, and two types of photodiodes by selective-area epitaxy [34].…”