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This retrospective paper describes the RowHammer problem in Dynamic Random Access Memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 conference [133]. RowHammer is a prime (and perhaps the first) example of how a circuit-level failure mechanism can cause a practical and widespread system security vulnerability. It is the phenomenon that repeatedly accessing a row in a modern DRAM chip causes bit flips in physically-adjacent rows at consistently predictable bit locations. RowHammer is caused by a hardware failure mechanism called DRAM disturbance errors, which is a manifestation of circuit-level cell-to-cell interference in a scaled memory technology.Researchers from Google Project Zero demonstrated in 2015 that this hardware failure mechanism can be effectively exploited by user-level programs to gain kernel privileges on real systems. Many other follow-up works demonstrated other practical attacks exploiting RowHammer. In this article, we comprehensively survey the scientific literature on RowHammer-based attacks as well as mitigation techniques to prevent RowHammer. We also discuss what other related vulnerabilities may be lurking in DRAM and other types of memories, e.g., NAND flash memory or Phase Change Memory, that can potentially threaten the foundations of secure systems, as the memory technologies scale to higher densities. We conclude by describing and advocating a principled approach to memory reliability and security research that can enable us to better anticipate and prevent such vulnerabilities.

Nanopore sequencing technology has the potential to render other sequencing technologies obsolete with its ability to generate long reads and provide portability. However, high error rates of the technology pose a challenge while generating accurate genome assemblies. The tools used for nanopore sequence analysis are of critical importance, as they should overcome the high error rates of the technology. Our goal in this work is to comprehensively analyze current publicly available tools for nanopore sequence analysis to understand their advantages, disadvantages and performance bottlenecks. It is important to understand where the current tools do not perform well to develop better tools. To this end, we (1) analyze the multiple steps and the associated tools in the genome assembly pipeline using nanopore sequence data, and (2) provide guidelines for determining the appropriate tools for each step. Based on our analyses, we make four key observations: (1) the choice of the tool for basecalling plays a critical role in overcoming the high error rates of nanopore sequencing technology. (2) Read-to-read overlap finding tools, GraphMap and Minimap, perform similarly in terms of accuracy. However, Minimap has a lower memory usage, and it is faster than GraphMap. (3) There is a trade-off between accuracy and performance when deciding on the appropriate tool for the assembly step. The fast but less accurate assembler Miniasm can be used for quick initial assembly, and further polishing can be applied on top of it to increase the accuracy, which leads to faster overall assembly. (4) The state-of-the-art polishing tool, Racon, generates high-quality consensus sequences while providing a significant speedup over another polishing tool, Nanopolish. We analyze various combinations of different tools and expose the trade-offs between accuracy, performance, memory usage and scalability. We conclude that our observations can guide researchers and practitioners in making conscious and effective choices for each step of the genome assembly pipeline using nanopore sequence data. Also, with the help of bottlenecks we have found, developers can improve the current tools or build new ones that are both accurate and fast, to overcome the high error rates of the nanopore sequencing technology.

BackgroundSeed location filtering is critical in DNA read mapping, a process where billions of DNA fragments (reads) sampled from a donor are mapped onto a reference genome to identify genomic variants of the donor. State-of-the-art read mappers 1) quickly generate possible mapping locations for seeds (i.e., smaller segments) within each read, 2) extract reference sequences at each of the mapping locations, and 3) check similarity between each read and its associated reference sequences with a computationally-expensive algorithm (i.e., sequence alignment) to determine the origin of the read. A seed location filter comes into play before alignment, discarding seed locations that alignment would deem a poor match. The ideal seed location filter would discard all poor match locations prior to alignment such that there is no wasted computation on unnecessary alignments.ResultsWe propose a novel seed location filtering algorithm, GRIM-Filter, optimized to exploit 3D-stacked memory systems that integrate computation within a logic layer stacked under memory layers, to perform processing-in-memory (PIM). GRIM-Filter quickly filters seed locations by 1) introducing a new representation of coarse-grained segments of the reference genome, and 2) using massively-parallel in-memory operations to identify read presence within each coarse-grained segment. Our evaluations show that for a sequence alignment error tolerance of 0.05, GRIM-Filter 1) reduces the false negative rate of filtering by 5.59x–6.41x, and 2) provides an end-to-end read mapper speedup of 1.81x–3.65x, compared to a state-of-the-art read mapper employing the best previous seed location filtering algorithm.ConclusionGRIM-Filter exploits 3D-stacked memory, which enables the efficient use of processing-in-memory, to overcome the memory bandwidth bottleneck in seed location filtering. We show that GRIM-Filter significantly improves the performance of a state-of-the-art read mapper. GRIM-Filter is a universal seed location filter that can be applied to any read mapper. We hope that our results provide inspiration for new works to design other bioinformatics algorithms that take advantage of emerging technologies and new processing paradigms, such as processing-in-memory using 3D-stacked memory devices.

We propose a new DRAM-based true random number generator (TRNG) that leverages DRAM cells as an entropy source.The key idea is to intentionally violate the DRAM access timing parameters and use the resulting errors as the source of randomness. Our technique speci cally decreases the DRAM row activation latency (timing parameter t RCD ) below manufacturerrecommended speci cations, to induce read errors, or activation failures, that exhibit true random behavior. We then aggregate the resulting data from multiple cells to obtain a TRNG capable of providing a high throughput of random numbers at low latency.To demonstrate that our TRNG design is viable using commodity DRAM chips, we rigorously characterize the behavior of activation failures in 282 state-of-the-art LPDDR4 devices from three major DRAM manufacturers. We verify our observations using four additional DDR3 DRAM devices from the same manufacturers. Our results show that many cells in each device produce random data that remains robust over both time and temperature variation. We use our observations to develop D-RaNGe, a methodology for extracting true random numbers from commodity DRAM devices with high throughput and low latency by deliberately violating the read access timing parameters. We evaluate the quality of our TRNG using the commonly-used NIST statistical test suite for randomness and nd that D-RaNGe: 1) successfully passes each test, and 2) generates true random numbers with over two orders of magnitude higher throughput than the previous highest-throughput DRAM-based TRNG.

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