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Articles you may be interested inThermal anneal activation of near-surface deep level defects in electron cyclotron resonance hydrogen plasmaexposed silicon J. Vac. Sci. Technol. B 15, 226 (1997); 10.1116/1.589269 Damage and contamination in lowtemperature electron cyclotron resonance plasma etching Damage formed by electron cyclotron resonance plasma etching on a gallium arsenide surface Damage and contamination produced after electron cyclotron resonance (ECR) etching of Si using CF 4 gas has been studied using electrical characterization, Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and etch pit density measurement techniques. Due to the sman dc self-bias voltage generated across the pla..<;ma sheath, ECR etching is expected to produce low damage and contamination levels. RBS measurements show that ECR etching does indeed produce less structural damage than that produced by conventional reactive ion etching (RIE). It is found that the damage and contamination levels from an ECR etching process are actually reduced by the addition of radio frequency (rO power to the wafer. The metallic impurity levels are shown to be greatly reduced by covering the stainless steel wall of the ECR source near the resonance region with an anodized Al liner. The plasma density in the resonance region of the reactor during ECR processes is much higher than that during RIE processes. Therefore, the ECR processes produce heavy metal contamination, which is mainly from the portion of the stainless steel wall of the reactor in contact with the plasma. Schottky diodes fabricated on the etched samples exhibit high leakage currents implying some damage and/or impurities are present in the near-surface region. Relationships that exist among the generation current of the metal-oxide-silicon (MOS) capacitors, the etch pit density and the metallic impurity level were studied. Some wafers were exposed to an Ar ECR/RIE plasma to compare the effects of pure physical sputtering and ion-assisted chemical etching, as when CF" was used. A possible explanation for the observed behavior is given.

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Liquid junctions for characterization of electronic materials. V. Comparison with solidstate devices used to characterize reactive ion etching of Si Photoelectrochemical cells consisting of n-type < lOO)-Si wafers in methanolic solutions of ferrocene derivatives with LiCI0 4 as the supporting electrolyte have been analyzed using a complementary set of impedance spectroscopy, electroreflectance, and current-voltage measurements. The results were interpreted in terms of charge accumulation modes correlated with junction parameters such as space-charge layer, surface states, Fermi-level pinning, and the possible presence of an insulating layer at the interface. The impedance of these junctions is interpreted in terms of an equivalent circuit. The Fermi level is partially pinned at a potential about 0.2 eV below the conduction band and is completely pinned at potentials positive to mid gap. The electroreflectance results agree well with the impedance. The effect of an HF etching on the properties of the cells will be discussed. We have also compared the results in the methanolic solution with an aqueous electrolyte. The potential distribution obtained in this case is very similar to the ferrocene solution.4884

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