Texture analysis of damascene-fabricated Cu lines by x-ray diffraction and electron backscatter diffraction and its impact on electromigration performance Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10-20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration.

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A new buffer layer for high temperature superconducting thin films AIP Conf. Proc. 273, 95 (1992); 10.1063/1.43576Lowloss substrate for epitaxial growth of hightemperature superconductor thin filmsWe have employed transmission electron microscopy and x-ray diffraction to investigate the properties of yttria-stabilized zirconium oxide (YSZ) sputter deposited on silicon. It is shown that the as-deposited YSZ films are polycrystalIine (grain size 7-20 nm) with microvoids between grains. Anneals of these films at temperatures of 800, 950, and 1 100 ·C for 1 h eliminate the microvoids and cause the grain size to increase from 20 to 50 nm at the higher anneal temperatures. Particular texture of the YSZ film is controlled by the details of the deposition conditions. Resistivity measurements of superconducting films deposited on silicon using these buffer layers are also presented.