2006
DOI: 10.1016/j.mee.2006.09.008
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Self-aligned metal capping layers for copper interconnects using electroless plating

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Cited by 67 publications
(57 citation statements)
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“…500 To reduce some of the complexity of such pitch division / multiple pass patterning schemes, new ES / HM materials and deposition processes are being sought that either provide high or contrasting etch selectivities relative to other materials, 501 or can be selectively deposited / grown on pre-existing patterned structures. [502][503][504] The latter is beyond the scope of this article. However for the former, we biefly review below some of the ES/HM challenges associated with multiple patterning schemes and one material system that could be useful in this regard.…”
Section: 15mentioning
confidence: 99%
“…500 To reduce some of the complexity of such pitch division / multiple pass patterning schemes, new ES / HM materials and deposition processes are being sought that either provide high or contrasting etch selectivities relative to other materials, 501 or can be selectively deposited / grown on pre-existing patterned structures. [502][503][504] The latter is beyond the scope of this article. However for the former, we biefly review below some of the ES/HM challenges associated with multiple patterning schemes and one material system that could be useful in this regard.…”
Section: 15mentioning
confidence: 99%
“…In this case, the EM lifetime degraded by half for each new generation due to the geometrical scaling of the critical void size 5 . The continuous degradation of EM reliability has stimulated extensive studies in strengthening the cap interface by various methods, including the use of a metal cap (CoWP, CoSnP, Ta) [7][8][9] or a surface alloy (Al) layer 9 before the SiNx cap deposition. Two orders of magnitude of improvement in EM lifetime have been demonstrated by using the CoWP cap [7][8][9] .…”
Section: Introductionmentioning
confidence: 99%
“…The continuous degradation of EM reliability has stimulated extensive studies in strengthening the cap interface by various methods, including the use of a metal cap (CoWP, CoSnP, Ta) [7][8][9] or a surface alloy (Al) layer 9 before the SiNx cap deposition. Two orders of magnitude of improvement in EM lifetime have been demonstrated by using the CoWP cap [7][8][9] . However, a recent study showed that the Cu grain structures were no longer bamboo-like when the Cu line width scaled down to 90 nm 10 .…”
Section: Introductionmentioning
confidence: 99%
“…3 Furthermore, a thin Co layer deposited by chemical vapor deposition (CVD) is considered as liner, as it can enhance the uniformity of PVD-Cu, thereby overcoming the seed discontinuity issue in narrow trenches. 2,4 However, for the case of TSV where a further aspect ratio increase is expected in the future, the PVD method will at some point face its intrinsic, physical limitation of an insufficient step coverage. 5 As liner, ruthenium has the advantage of being a platable material and characterization of CMP has previously been reported.…”
mentioning
confidence: 99%
“…15,16 In alkaline solution, the Co forms a passivation layer, i.e. Co(OH) 2 , and this passivated Co is less prone to corrosion compared to the situation where the Co liner is exposed to an acidic plating solution. 17 Even an electrodeposition process in alkaline solution still faces challenges when the Co liner thickness is to be scaled further because terminal effects will come into play during the ECD process and this introduces thickness variations across the wafer.…”
mentioning
confidence: 99%