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The precipitation of copper oxalate has been studied in a batch reactor. Like many other systems, the morphology of these particles suggests that they were formed by art aggregation mechanism. A mathematical model has been developed to predict particle-size distributions grown in a batch reactor, which accounts for growth by two competing mechanisms, i.e., atomistic growth and particle aggregation. The results of this model are in good agreement with experimental observations for the precipitation of copper oxalate aggregates and other spherical aggregation systems cited in the literature.

This work reviews the mechanical properties and fracture mechanics of materials important in the manufacture of multilayer interconnects on silicon chips in order to understand surface damage caused during chemical mechanical polishing (CMP). It 2 gives an explanation for chatter marks, surface flaking in interlayer dielectric material (ILD) and rolling indenter and plastic plow lines in copper on the wafer surface during CMP of silicon chips.

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