Abstract-Currently, both high-density 3-D stacking nonvolatile (NV) memory and embedded NV memory in advanced systems on panel (SOPs) urgently demand the assistance of new and functional transition metal-oxide materials. This is to overcome serious fabrication issues encountered in the use of conventional Si or poly-crystalline Si materials, as well as to increase storage density with lower process cost. This paper reports the fully functional NV memory structure operated by an ionic amorphous oxide semiconductor with a wide energy band gap (> 3.0 eV) in a Ga 2 O 3 -In 2 O 3 -ZnO (GIZO) system under low process temperature (< 400• C) while being combined with various metal-oxide materials of Al 2 O 3 , GIZO, and Al 2 O 3 as the electron charge's tunneling, storage, and blocking layers, respectively. The different methods of memory programs and, especially, the unique erase characteristics caused by a much wider band gap than Si were intensively being investigated, and as a result, excellent electrical results of a large program/erase window over 3.8 V at a pulse time of 10 ms are achieved.Index Terms-Amorphous, gallium indium zinc oxide (GIZO), memory, nonvolatile (NV), oxide, program/erase (P/E), thin-film transistor (TFT).

We investigate ambipolar to unipolar transition by the effect of ambient air on the carbon nanotube field-effect transistor. A unipolar transport property of the double-walled nanotube field-effect transistor and its conversion from ambipolar behavior are observed. We suggest that adsorptions of oxygen molecules, whose lowest-unoccupied-molecular-orbital state is around the midgap of the carbon nanotube, could suppress the electron channel formation and, consequently, result in the unipolar transport behavior.

A new type of memory, Paired FinFET charge trap memory is reported. It consists of two split silicon fins and insulator between them. Two channels are formed on the outer surface of silicon so doubled integration density can be achieved. We successfully fabricated Paired FinFET SONOS devices. It shows good program and erase characteristics. Independent programming on each storage nodes is demonstrated. The circuit configuration for NAND flash application is also proposed.

Gallium phosphide (GaP) nanowire transistors were fabricated in back-gated structure, and their electrical characteristics were measured systematically in both air and vacuum. The transistors turn on typically between −5 and −7V in ambient air. However, a large threshold voltage (Vth) shift, ∼10V, toward negative gate bias was observed in vacuum. After the transistors were exposed to air for 48h, Vth returned to the similar value in ambient air, implying a reversible process. The rate of Vth shift slows down when they were exposed to N2 in comparison with that of air. The shift of Vth is believed to be related to the charge transfer from the surface of GaP nanowire to the physically adsorbed OH or oxygen. In addition, the observed Vth shift from the GaP nanowire transistors can be explained by the conventional n-channel depletion mode metal-oxide-semiconductor field-effect transistor.

Fidelity, as a measure of the distinguishability of states, is an important concept in quantum mechanics, quantum optics and quantum information theory. Recently, the explicit expressions of fidelity for single-mode squeezed states have been given. However, in experimental studies, especially in non-degenerate parametric down-conversion, two photons are generated and one studies two-or more-mode systems. In this paper we study the Bures fidelity for thermal states of a diagonalizable quadratic Hamiltonian in multi-mode Fock space. To the best of our knowledge, no one has yet attempted to give an explicit general formula of fidelity of mixed states in multi-mode systems.

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