Four-level nonvolatile small-molecule 4F(2) memory cells were developed with a sandwiched device structure consisting of an upper Al electrode, upper small-molecule layer (Alq(3), aluminum tris(8-hydroxyquinoline)), Ni nanocrystals surrounded by NiO tunneling barrier, lower small-molecule layer, and bottom Al electrode. In particular, an in situ O(2)-plasma oxidation process following Ni evaporation was developed to produce uniformly stable 10 nm Ni nanocrystals surrounded by a NiO tunneling barrier embedded in the small-molecule layer. They presented a memory margin (I(on)/I(off) ratio) of approximately 1 x 10(3), a retention time of more than 10(5) s, an endurance of more than 5 x 10(2) erase-and-program cycles, and multilevel cell (MLC) operation, being a terabit nonvolatile memory-cell. A vertically double-stacked 4F(2) multilevel nonvolatile memory cell was also developed, showing a memory margin of approximately 1 x 10(3) in both the top and bottom memory cells and eight-level cell operation.

Lanthanide-organic complexes of the general type Ln[N(SiMe(3))(2)](3) (Ln = La, Sm, Y, Lu) serve as effective precatalysts for the rapid, exoselective, and highly regioselective intramolecular hydroalkoxylation/cyclization of primary and secondary alkynyl alcohols to yield the corresponding exocyclic enol ethers. Conversions are highly selective with products distinctly different from those generally produced by conventional transition metal catalysts, and turnover frequencies as high as 52.8 h(-1) at 25 degrees C are observed. The rates of terminal alkynl alcohol hydroalkoxylation/cyclization are significantly more rapid than those of internal alkynyl alcohols, arguing that steric demands dominate the cyclization transition state. The hydroalkoxylation/cyclization of internal alkynyl alcohols affords excellent E-selectivity. The hydroalkoxylation/cyclization of the SiMe(3)-terminated internal alkynyl alcohols reveals interesting product profiles which include the desired exocyclic ether, a SiMe(3)-eliminated exocyclic ether, and the SiMe(3)-O-functionalized substrate. The rate law for alkynyl alcohol hydroalkoxylation/cyclization is first-order in [catalyst] and zero-order in [alkynyl alcohol], as observed in the intramolecular hydroamination/cyclization of aminoalkenes, aminoalkynes, and aminoallenes. An ROH/ROD kinetic isotope effect of 0.95(0.03) is observed for hydroalkoxylation/cyclization. These mechanistic data implicate turnover-limiting insertion of C-C unsaturation into the Ln-O bond, involving a highly organized transition state, with subsequent, rapid Ln-C protonolysis.

Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/microm and the current density was about 0.2 mA/cm(2) at 17.5 V/microm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.

No abstract

Lanthanide-organic complexes of the general type [Ln{N(SiMe(3))(2)}(3)] (Ln=La, Sm, Y, Lu) serve as effective precatalysts for the rapid, exo-selective, and highly regioselective tandem double intramolecular hydroalkoxylation/cyclization of primary and secondary dialkynyl dialcohols to yield the corresponding bi-exocyclic enol ethers. Conversions are highly selective with products distinctly different from those generally produced by conventional transition metal or other catalysts, and the turnover frequencies with some substrates are too large to determine accurately. The rates of terminal alkynl alcohol hydroalkoxylation/cyclization are significantly more rapid than those of internal alkynyl alcohols, arguing that steric demands dominate the cyclization transition state. The hydroalkoxylation/cyclizations of internal dialkynyl dialcohols afford excellent E selectivity. The rate law for dialkynyl dialcohol hydroalkoxylation/cyclization is first-order in [catalyst] and zero-order in [alkynyl alcohol], as is observed for the organolanthanide-catalyzed hydroamination/cyclization of aminoalkenes, aminoalkynes, and aminoallenes, and the intramolecular single-step hydroalkoxylation/cyclization of alkynyl alcohols. An ROH/ROD kinetic isotope effect of 0.82(0.02) is observed for the tandem double hydroalkoxylation/cyclization. These mechanistic data implicate turnover-limiting insertion of C-C unsaturation into the Ln-O bond, involving a highly organized transition state, with subsequent, rapid Ln-C protonolysis.

A measurement of the electron energy distribution function (EEDF) using the ac superposition method is done over a helium pressure range of 10-100 mTorr in a planar inductive plasma, and the electron energy diffusion coefficient which describes the electron heating is calculated based on the same discharge conditions using a two-dimensional simulation. It is found that the measured EEDF shows a bi-Maxwellian distribution with a low-energy electron group at low pressures below 20 mTorr even in the inductive discharge using helium of the non-Ramsauer gas. The major factors which can affect the EEDF formation are investigated. In particular, the concept of the total electron bounce frequency, i.e., the electron residence time, is introduced as an indicator of how the electron-electron collision affects the EEDF shape. As a result, it is shown that the observed bi-Maxwellian distribution at low pressures is attributed to the combined effects of the formation of low-energy electrons through the cooling mechanism of energetic electrons enhanced by the capacitive field, the low heating rate of the low-energy electrons, the confinement of low-energy electrons by the ambipolar space potential, and the low electron-electron collision frequency which can be estimated from the total electron bounce frequency presented in this paper.

No abstract

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits.