Ambient air effects on electrical characteristics of GaP nanowire transistors

Kang, Dong‐Hun; Ko, Ju Hue; Bae, Eunju; Hyun, Jaewoong; Park, Wanjun; Kim, Byoung Kye; Kim, Ju‐Jin; Lee, Cheol-Jin

doi:10.1063/1.1818714

Cited by 22 publications

(10 citation statements)

References 14 publications

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“…2͑a͒, the environment and temperature do not greatly affect the I-V characteristics. [13][14][15] Second, the position of the Fermi level at the Si surface adjacent to the Schottky barrier, altered by the environment, will, in turn, alter the depletion width in the nanowire immediately adjacent to the end of the wraparound contact. 2͑b͒ reveals that the measurements in vacuum for the diode to the more lightly doped nanowire yield a much higher current ͑by one to three orders of magnitude͒ than those taken in N 2 , indicating that the environment plays a significant role in the current transport through these devices.…”

Section: A First-generation Test Structurementioning

confidence: 99%

Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires

Woodruff

Dellas

Liu

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSchottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching Appl. Phys. Lett. 98, 102113 (2011); 10.1063/1.3565971 Hydrogenated amorphous silicon nanowire transistors with Schottky barrier source/drain junctions Appl. Phys. Lett. 97, 143509 (2010); 10.1063/1.3499288 Contact mechanisms and design principles for (Schottky and Ohmic) metal contacts to semiconductor nanowires Arrays of Ni nanowire/multiwalled carbon nanotube/amorphous carbon nanotube heterojunctions containing Schottky contacts Appl. Phys. Lett. 90, 033114 (2007);Schottky contacts to n-type silicon nanowires were fabricated using Ni or nickel silicide contacts in a wraparound or end contact geometry, respectively. Series resistance in the test structures was reduced by heavily doping the opposite end of the silicon nanowire, facilitating Ohmic contact formation and reducing the resistance of the nanowire itself. The effective Schottky barrier height is reported as a function of nanowire doping, ambient, and applied back gate bias, highlighting some of the important variables affecting current transport in Schottky contacts to semiconductor nanowires. For the silicide contact to the most lightly doped silicon nanowire, measurements in N 2 showed that the effective barrier height without a back gate bias was 0.69 eV, and the ideality factor was 1.1.

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Section: A First-generation Test Structurementioning

confidence: 99%

Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires

Woodruff

Dellas

Liu

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…GaP material is also a candidate material for solar cells [4], because of very high absorption coefficients determined at short wavelengths (UV, blue, blue-green) due to the direct band gap of GaP just 0.5 eV above the indirect gap [5]. Recently, GaP nanowires (GaP NW's) are also being important materials to build nanoscale optical and electronic devices [6][7][8][9][10], because of their manageable electronic properties due to the quantum size confinement. In the literature, high purity GaP NW's have been generally synthesized by the oxide [11][12][13] and Au particles [14][15][16][17][18] assisted methods.…”

Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of GaP nanowires

Mohammad

Katırcıoğlu

2015

Physica E: Low-dimensional Systems and Nanostructures

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“…[1][2][3][4][5][6][7][8][9] Semiconductor nanowire is considered as a good candidate for materials of field effect transistor (FET) devices. High electric conductance is expected due to the ballistic conduction.…”

Section: Introductionmentioning

confidence: 99%

Calculation of the Electronic State in Electronic Current for Nanowire Models

Senami

Ikeda

Fukushima

et al. 2010

Jpn. J. Appl. Phys.

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The first results of the calculations of our program code are shown for nanowire models. In our code, the electronic current is treated as quantum states, and the effects of the coulomb and exchange interaction by conductive electrons on electrons in system are included. We show our results as the local electronic current density defined by one of the authors. The magnetic field induced by the electronic current is studied by including effects of vector potential in electronic state calculations. The effects on the electrons in systems by the conductive electrons are also studied. By the existence of the conductive electrons in the systems, the energy eigenvalues of higher orbitals rise, while the lower orbitals are stabilized by the conductive states. It may imply that materials is made more conductive by conductive electrons since the electons in the materials are unstabilized by them. #

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Ambient air effects on electrical characteristics of GaP nanowire transistors

Cited by 22 publications

References 14 publications

Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires

Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires

Structural and electronic properties of GaP nanowires

Calculation of the Electronic State in Electronic Current for Nanowire Models

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