The effect of Ar plasma treatment on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The net electron carrier concentration (1020–1021cm−3) of the a-IGZO thin films dramatically increased upon their exposure to the Ar plasma compared to that (1014cm−3) of the as-deposited thin film. The authors attempted to reduce the contact resistance between the Pt∕Ti (source/drain electrode) and a-IGZO (channel) by using the Ar plasma treatment. Without the treatment, the a-IGZO thin film transistors (TFTs) with W∕L=50∕4μm exhibited a moderate field-effect mobility (μFE) of 3.3cm2∕Vs, subthreshold gate swing (S) of 0.25V∕decade, and Ion∕off ratio of 4×107. The device performance of the a-IGZO TFTs was significantly improved by the Ar plasma treatment. As a result, an excellent S value of 0.19V∕decade and high Ion∕off ratio of 1×108, as well as a high μFE of 9.1cm2∕Vs, were achieved for the treated a-IGZO TFTs.

Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors Appl. Phys. Lett. 102, 083508 (2013); 10.1063/1.4793996Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zincoxide thin films Appl. Phys. Lett. 97, 243506 (2010); 10.1063/1.3525932High mobility amorphous zinc oxynitride semiconductor material for thin film transistors Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application J.

No abstract

Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO2 passivation layer. To prevent such damages, N2O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO2 deposition. N2O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37cm2∕Vs, a threshold voltage of 0.1V, a subthreshold swing of 0.25V/decade, and an Ion∕off ratio of 7.

This study evaluated the root-filling quality of a calcium silicate-based sealer and gutta percha (GP) cones by measuring the percentage of voids. Twenty artificial molar teeth were divided into two groups: one obturated using the single-cone (SC) technique, and the other using the continuous wave (CW) technique. Obturation was performed with GP cones and Endoseal MTA (mineral trioxide aggregate, Maruchi, Wonju, Korea). Obturated teeth were scanned using microcomputed tomography, and the percentage of void volume was calculated in the apical and coronal areas. A linear mixed model was used to determine the differences between the two techniques (p < 0.05). The percentage of voids between the filling materials and root canal walls was not significantly different between the two obturation methods (p > 0.05), except for the CW group, which demonstrated a significantly higher void volume in the coronal area of the distal canal (p < 0.05). The percentage of voids inside the filling material was significantly higher in the CW groups for all of the comparisons (p < 0.05), except in the apical area of the distal canal (p > 0.05). The voids between the filling material and canal wall in the apical area were not significantly different between the two techniques.

We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of 5 cm2/V s, a threshold voltage of 0.2 V, and a subthreshold swing of 0.2 V/decade. Ar plasma was treated on the source/drain region of the a-GIZO active layer to reduce the series resistance. After Ar plasma treatment, the surface of the source/drain region was divided into In-rich and In-deficient regions. The a-GIZO TFT also had a constant sheet resistance of 1 kΩ/◻ for a film thickness of over 40 nm. The interface between the source/drain Mo metal and the Ar plasma-treated a-GIZO indicated a good Ohmic contact and a contact resistivity of 50 μΩ cm2.

Articles you may be interested inHigh-performance transparent, all-oxide nonvolatile charge trap memory transistor using In-Ga-Zn-O channel and ZnO trap layer

Enterotoxigenic Bacteroides fragilis (ETBF) produces an approximately 20-kDa heat-labile enterotoxin (BFT) that plays an essential role in mucosal inflammation. Although spontaneous disappearance of ETBF infection is common, little information is available on regulated expression of antibacterial factors in response to BFT stimulation. This study investigates the role of BFT in human β-defensin 2 (hBD-2) induction from intestinal epithelial cells. Stimulation of HT-29 and Caco-2 intestinal epithelial cell lines with BFT resulted in the induction of hBD-2. Activation of a reporter gene for hBD-2 was dependent on the presence of NF-κB binding sites. In contrast, suppression of AP-1 did not affect hBD-2 expression in BFT-stimulated cells. Inhibition of p38 mitogen-activated protein kinase (MAPK) using SB203580 and small interfering RNA (siRNA) transfection resulted in a significant reduction in BFT-induced IκB kinase (IKK)/NF-κB activation and hBD-2 expression. Our results suggest that a pathway including p38 MAPK, IKK, and NF-κB activation is required for hBD-2 induction in intestinal epithelial cells exposed to BFT, and may be involved in the host defense following infection with ETBF.