Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

Abstract

Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors Appl. Phys. Lett. 102, 083508 (2013); 10.1063/1.4793996Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zincoxide thin films Appl. Phys. Lett. 97, 243506 (2010); 10.1063/1.3525932High mobility amorphous zinc oxynitride semiconductor material for thin film transistors Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application J.

Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors

“…In particular, zinc oxide (ZnO) has recently attracted intense experimental and theoretical attention owing to its potential use in the emerging nanoelectronics and optoelectronics [5][6][7]. ZnO-based semiconductors can incorporate indium oxide as a carrier-mobility enhancer and gallium oxide or hafnium oxide as a columnar-structure suppressor for the amorphous phase in order to achieve high field-effect mobility and low off-state current of the channel [8][9][10]. They have become promising candidates of transparent and flexible nonvolatile memories to be integrated in system-on-panel displays [11][12][13].…”

Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

“…Hafnium possesses an atomic radius close to that of indium and is easily bonded with oxygen resulting in lower carrier concentration sensitivity, which improves the device performance. [36][37][38][39] However, the fabrication process of gallium-substituted HfIZO compounds requires the sensitive control of the concentration ratio of each component to achieve good device performance. Using simple and general post-treatment with oxygen annealing, a favorable shift of V th and its independence from the channel width and channel length were achieved for poor HfIZO TFTs, as shown in figure 2 (a).…”

Overview of electroceramic materials for oxide semiconductor thin film transistors

“…The researchers suggested that high postannealing (300°C) treatment of a-GaSnZnO TFTs produced better electrical performance and stability than those of a-IGZO TFTs due to the Ga 3+ and Sn 4+ ions. There have been many similar demonstrations to date involving Si, Al, Zr, Hf, Ga, and Sn with InZnO and ZnSnO matrices, aimed at improving electrical performance (e.g., μ fe and stability) [38][39][40][41][42][43][44][45][46][47][48][49][50][51][52].…”

“…Kim et al [41] reported the application of an amorphous HfInZnO thin-film as an oxide semiconductor layer [ Fig. 4(c) and (d)].…”

“…Another approach has been focused on exchanging Ga with other elements such as Zr [40], Hf [41], La [49], Mg [50], and Si [44] to form amorphous In(Zr, Hf, La, Mg, Si)ZnO-matrices since these elements can act as carrier-suppressors within InZnO as well as network stabilizers. These carriersuppressors normally have relatively high electro-negativities for binding oxygen strongly within a crystalline structure.…”