Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

Park, Jaechul; Song, Ihun; Kim, Sunil; Kim, Sang–Wook; Kim, Changjung; Lee, Jaecheol; Lee, Hyung-Ik; Lee, Eunha; Yin, Huaxiang; Kim, Kyoung-Kok; Kwon, Kee-Won; Park, Young-Soo

doi:10.1063/1.2966145

Cited by 100 publications

(69 citation statements)

References 12 publications

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“…15͒ plasma to form highly conductive a-IGZO source/drain regions. Park et al 14 report improved performances such as a saturation mobility sat ϳ 5 cm 2 V −1 s −1 , but the Ohmic contact between the channel/source/drain a-IGZO and the wiring metal is not satisfactory. Furthermore, in general, the TFTs used for backplanes of FPDs must be covered with insulating layers ͑pro-tection layer͒ to protect themselves from the subsequent stacking of upper devices such as liquid-crystal cells and OLEDs and from the influence of an environment.…”

mentioning

confidence: 97%

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

Sato

Abe

Hayashi

et al. 2009

Applied Physics Letters

177

106

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A fabrication process of coplanar homojunction thin-film transistors (TFTs) is proposed for amorphous In–Ga–Zn–O (a-IGZO), which employs highly doped contact regions naturally formed by deposition of upper protection layers made of hydrogenated silicon nitride (SiNX:H). The direct deposition of SiNX:H reduced the resistivity of the semiconductive a-IGZO layer down to 6.2×10−3 Ω cm and formed a nearly ideal Ohmic contact with a low parasitic source-to-drain resistance of 34 Ω cm. Simple evaluation of field-effect mobilities (μsat) overestimated their values especially for short-channel TFTs, while the channel resistance method proved that μsat was almost constant at 9.5 cm2 V−1 s−1.

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mentioning

confidence: 97%

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

Sato

Abe

Hayashi

et al. 2009

Applied Physics Letters

177

106

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“…This problem is solved by employing a top protection layer (passivation layer) composed of SiO x , SiN x or similar, which blocks the penetration and diffusion of O-, H 2 O-and H-related molecules [71]. On the other hand, this sensitivity to a reducing atmosphere and hydrogen has been utilized to form improved source and drain contacts [72], and has been applied to self-alignment processes [73], which are expected to lead to a simpler process for fl at-panel display production.…”

Section: Summary: Present and Future Issuesmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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“…The Ar plasma produced oxygen vacancy sites in the IGZO film, which dramatically reduced the film's resistivity. 33,34 The IGZO regions that had been treated or untreated with Ar plasma served as the source/drain electrodes and the channel of the transistor, respectively, as shown in the right inset of Figure 1d. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 5 increasing V G in both the linear and saturation regimes.…”

Section: Methodsmentioning

confidence: 99%

Wafer-Scale Microwire Transistor Array Fabricated via Evaporative Assembly

Park

Sun

Choi

et al. 2016

ACS Appl. Mater. Interfaces

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One-dimensional (1D) nano/microwires have attracted significant attention as promising building blocks for various electronic and optical device applications. The integration of these elements into functional device networks with controlled alignment and density presents a significant challenge for practical device applications. Here, we demonstrated the fabrication of wafer-scale microwire field-effect transistor (FET) arrays based on well-aligned inorganic semiconductor microwires (indium-gallium-zinc-oxide (IGZO)) and organic polymeric insulator microwires fabricated via a simple and large-area evaporative assembly technique. This microwire fabrication method offers a facile approach to precisely manipulating the channel dimensions of the FETs. The resulting solution-processed monolithic IGZO microwire FETs exhibited a maximum electron mobility of 1.02 cm(2) V(-1) s(-1) and an on/off current ratio of 1 × 10(6). The appropriate choice of the polymeric microwires used to define the channel lengths enabled fine control over the threshold voltages of the devices, which were employed to fabricate high-performance depletion-load inverters. Low-voltage-operated microwire FETs were successfully fabricated on a plastic substrate using a high-capacitance ion gel gate dielectric. The microwire fabrication technique involving evaporative assembly provided a facile, effective, and reliable method for preparing flexible large-area electronics.

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Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

Cited by 100 publications

References 12 publications

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

Material characteristics and applications of transparent amorphous oxide semiconductors

Wafer-Scale Microwire Transistor Array Fabricated via Evaporative Assembly

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