Abstract:GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues.

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This paper reviews the main mechanisms responsible for trapping and breakdown in power HEMTs based on gallium nitride. With regard to the trapping mechanisms, we describe the role of carbon and iron buffer doping compensation in determining the dynamic Ron. We also demonstrate how the use of double heterostructure without doping or a single-heterostructure with proper buffer doping compensation can effectively reduce trapping phenomena. In addition, we investigate the breakdown limits of single and double heterostructure (DH) HEMTs, by electrical and electroluminescence characterization. Results indicate that, for the devices adopting double heterostructure without doping or singleheterostructure with proper buffer doping compensation, the breakdown voltage linearly scales with the gate-drain distance, and provides information on the origin of breakdown current components for different bias levels and epitaxial structures

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