Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Meneghini, Matteo; Hilt, Oliver; Wuerfl, J.; Meneghesso, G.

doi:10.3390/en10020153

Cited by 120 publications

(85 citation statements)

References 44 publications

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“…[5]. According to Equations (5)- (7), the quantum coupling effect reaches the minimum under the effective electron mass matching condition that m Ã GaNÀz % m Ã GÀz , and thus the current reduction is least. This is consistent with the possibility of suppressing the current collapse with a p-GaN gate because it can meet the effective electron mass matching condition.…”

Section: Resultsmentioning

confidence: 99%

“…This is consistent with the possibility of suppressing the current collapse with a p-GaN gate because it can meet the effective electron mass matching condition. [7] The current collapse is different for different gate materials because they have different effective mass. Note that the Schottky barrier heights of Pt and Au on GaN as 1.16, and 0.98 eV according to Ref.…”

Section: Resultsmentioning

confidence: 99%

“…One of the AlGaN/GaN HEMTs reliability issues is the reduction of drain current or current collapse upon the application of high power or/and high voltage, which ultimately limits the output power density and the device reliability of GaN HEMTs. [1][2][3][4][5][6][7] This report addresses such current reduction using a physical model-quantum coupling of the hot electrons in AlGaN/GaN HEMTs. Both material selection and novel device configuration like dual plates are highlighted to improve the reliability of HEMTs by eliminating the current reduction.…”

Section: Introductionmentioning

confidence: 99%

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Current Reduction Caused by the Quantum Coupling of Hot Electrons in AlGaN/GaN Transistors

Mao

2018

Physica Status Solidi (a)

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Barrier height of AlGaN/GaN transistor is lowered by the quantum coupling of hot electrons with large transverse energy via electro‐thermal effect. The coupling effectively raises the quantized levels of hot electrons, changes the electron density of the two‐dimensional electron gas, and consequently decreases the source drain current of the transistor. Based on the theory of quantum coupling of hot electrons, the current reduction is successfully modeled. The model is able to explain the effect of gate voltage, device temperature, gate length, gate metals, passivation, field‐plate structure, traps, and electron‐phonon interaction on current reduction. It also predicts a relative decrease of 4.6% in the source drain current caused by the quantum coupling at moderately low electron temperature of 1771 K.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Current Reduction Caused by the Quantum Coupling of Hot Electrons in AlGaN/GaN Transistors

Mao

2018

Physica Status Solidi (a)

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“…The injected holes are accumulated at the p-GaN/AlGaN interface. This lead to a negative shift in threshold voltage, which can also be observed in [16]. Recent studies [17] shows that using hydrogen plasma treatment instead of etching technology may compensate holes in the p-GaN layer above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high resistivity area to reduce leakage current and increase threshold voltage stability.…”

Section: On-state Resistance (Rds(on))mentioning

confidence: 92%

Temperature Effects of GaN HEMTs on the Design of Power Converters

Bouchour

Dherbécourt

Latry³

et al. 2019

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 20

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This paper proposes an experimental study of temperature effects on Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). The output and transfer characteristics are monitored at temperatures ranging from 5°C to 105°C. The temperature dependency on static parameters of GaN HEMT is examined, such as: drain current (IDS), on-state resistance (RDS(ON)), transconductance (gm), threshold voltage (VTH) and the gate leakage current (IGSS). The decreases of IDS and gm accompanied with the increase of RDS(ON) and IGSS when increasing temperature have been observed. Moreover, the decrease in electron mobility with increasing temperatures is considered to be one of the causes of the reduction in the drain current and transconductance. In order to study the impact of temperature on power converters with GaN HEMTs by simulation approach, the thermal characteristics of a 650V, 30A GaN HEMT have been modelled. The used model is a nonsegmented Electro-thermal SPICE model of Motorola. The model parameters are extracted using Levenberg-Marquardt Algorithm.

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“…In [12,13], the calculations for GaN HEMT losses, including switching losses, parasitic capacitance losses, etc., are presented. The reliability assessment of GaN HEMTs for power switching applications is given in [14,15]. In [14] an extensive analysis is provided on the physical mechanisms responsible for the failure of GaN HEMTs, and several critical characteristics are recommended to evaluate the electrical reliability of GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

et al. 2019

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The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.

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Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Cited by 120 publications

References 44 publications

Current Reduction Caused by the Quantum Coupling of Hot Electrons in AlGaN/GaN Transistors

Current Reduction Caused by the Quantum Coupling of Hot Electrons in AlGaN/GaN Transistors

Temperature Effects of GaN HEMTs on the Design of Power Converters

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

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