AlGaN/GaN HEMT based sensor and system for polar liquid detection

Chaturvedi, Nidhi; Singh, Kuldip; Kachhawa, Pharyanshu; Lossy, R.; Mishra, Saroj Kumar; Chauhan, Ashok; Kharbanda, D. K.; Jain, Amber Kumar; Thakur, Rajiv R.; Saxena, Devanshu; Khanna, P. K.; Wuerfl, J.

doi:10.1016/j.sna.2019.111799

Cited by 18 publications

(18 citation statements)

References 27 publications

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“…The results also showed that the fabricated sensor had a percentage change of 1.78%, 2.18% and 6.3% in drain current for mercury chloride, copper chloride and sodium chloride respectively with respect to the drain current of pure water [80]. The results also showed that the readout circuit shows a change of 0.15, 0.20 and 0.34 mA in drain current for acetone, water and methanol respectively and ensures the detection of different polar liquids [80]. Finally, the study showed that the sensor was sensitive to the concentration of polar liquids so it could be used to detect the leakage or mixing of foreign substance into the liquid [80].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 82%

“…The result of the study showed that the sensor had a typical drain current of 21.2 mA at 3.3 V [80]. The results also showed that the fabricated sensor had a percentage change of 1.78%, 2.18% and 6.3% in drain current for mercury chloride, copper chloride and sodium chloride respectively with respect to the drain current of pure water [80]. The results also showed that the readout circuit shows a change of 0.15, 0.20 and 0.34 mA in drain current for acetone, water and methanol respectively and ensures the detection of different polar liquids [80].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

“…Figure 10 show the change in resistance (ΔR) observed due to CO sensing (100 ppm) at different temperatures. The GaN-high electron mobility transistor (HEMT) based sensor was investigated and reported by Chaturvedi et al [80] for polar liquid sensing. The fabricated HEMT sensor chip was packaged by using low temperature co-fired ceramic technique [80].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

“…The GaN-high electron mobility transistor (HEMT) based sensor was investigated and reported by Chaturvedi et al [80] for polar liquid sensing. The fabricated HEMT sensor chip was packaged by using low temperature co-fired ceramic technique [80]. The result of the study showed that the sensor had a typical drain current of 21.2 mA at 3.3 V [80].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

“…The fabricated HEMT sensor chip was packaged by using low temperature co-fired ceramic technique [80]. The result of the study showed that the sensor had a typical drain current of 21.2 mA at 3.3 V [80]. The results also showed that the fabricated sensor had a percentage change of 1.78%, 2.18% and 6.3% in drain current for mercury chloride, copper chloride and sodium chloride respectively with respect to the drain current of pure water [80].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

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Review of GaN Nanowires Based Sensors

Nahhas¹

2020

AJN

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This paper presents a review of the recent advances of GaN based nanowires sensors. GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and useful in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications specially in nanowires sensors. GaN nanowires sensors have been used in many devices such as gas sensors, biosensors, and pressure sensors. The recent aspects of GaN based nanowires sensors are presented and discussed. The performance of several sensors based devices which have been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 82%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

See 3 more Smart Citations

Review of GaN Nanowires Based Sensors

Nahhas¹

2020

AJN

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A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Sinha

Pal

2021

Electrochemical Science Adv

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The demand for miniaturized point‐of‐care chemical/biochemical sensors has driven the development of field‐effect transistors (FETs) based pH sensors over the last 50 years. This paper aims to review the fabrication technologies, device structures, sensing film materials, and modeling techniques utilized for FET‐based pH sensors. We present the governing principles of potentiometric sensors, with major focus on the working principles of ion‐sensitive FETs (ISFETs). We extensively review different sensing film materials deposited by various techniques, which is critical to the sensing performance of ISFETs. The popular fabrication technologies have been presented, with special emphasis on state‐of‐the‐art silicon‐on‐insulator based technology, which can achieve high sensitivity by utilizing the dual‐gate effect. Furthermore, recent advancements in nano‐ISFETs has been elucidated. We also discuss the adoption of unmodified complementary metal‐oxide semiconductor (CMOS) ISFETs using standard CMOS processes, which has enabled the fabrication of integrated ISFET arrays, which are especially suited for ion‐imaging applications. Moreover, recent developments in extended‐gate FETs has been discussed, which have gained lot of attention due to their design flexibility and ease of fabrication, which is desirable for wearable sensing applications. In addition, recently there have been efforts to utilize nonsilicon channel materials for pH‐sensing application to obtain superior performance and various channel materials have been reviewed. Finally, we have extensively reviewed the ISFET device modeling and simulation techniques using various computer‐aided design tools, which aid in sensor design and characterization.

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