A highly sensitive Nano Gap Embedded AlGaN/GaN HEMT sensor for Anti-IRIS antibody detection

Poonia, Ritu; Bhat, Aasif Mohammad; Periasamy, C.; Sahu, Chitrakant

doi:10.1016/j.micrna.2022.207342

Cited by 5 publications

(2 citation statements)

References 34 publications

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“…The higher sensitivity of GaN HEMT-based sensors promises a low detection limit, making them suitable for early-stage diagnosis. GaN HEMT-based sensors have been researched earlier for various sensors, such as pH sensing [24][25][26], heavy metal ion sensing [27,28], cerbB2 detection [29], C-reactive ion detection [30], C3G detection [31], Anti-IRIS anitbody detection [32], polar liquid detection [33] and prostate-specific antigen (PSA) detection [34].…”

Section: Introductionmentioning

confidence: 99%

A theoretical approach to study the frequency dependent dielectric behavior of breast cancer cells using AlN buffer-based AlGaN/GaN HEMT

Poonia,

Bhargava,

Mohammad Bhat

et al. 2024

Phys. Scr.

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This article investigates the applicability of open gated high electron mobility transistor (HEMT) as a biosensing platform for Breast cancer detection. The present study reports the detection of healthy (MDA-10) and malignant cells (MDA-MB-231) associated with breast cancer using high-quality AlN buffer AlGaN/GaN HEMT with dual cavity structure formed by etching out the gate metal from source and drain sides under the gate region. The AlN buffer AlGaN/GaN HEMT provides better 2DEG confinement and large conduction band offset than GaN buffer. The proposed design is analyzed at frequencies of 900 MHz and 10 GHz, as breast cells have distinct dielectric properties at different microwave frequencies. The variation in dielectric constant of the cavity region corresponding to biomolecular species will change the device’s electrical characteristics and hence can be used to detect breast cancer cells. In this work, the device sensing parameters considered for analysis are shift in threshold voltage and drain current sensitivity. The device performance has also been analyzed by optimizing cavity thickness and length to select the best design for the sensing. The effect of non-ideal conditions such as steric hindrance and probing is also studied by emulating these real time effects in simulation. The device shows a maximum drain current sensitivity of 29.94% for 20 nm of cavity thickness and 1µm of the cavity length. The results depict that the proposed device design exhibits a highly sensitive response and can be promising alternate for future biosensing applications.

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Section: Introductionmentioning

confidence: 99%

A theoretical approach to study the frequency dependent dielectric behavior of breast cancer cells using AlN buffer-based AlGaN/GaN HEMT

Poonia,

Bhargava,

Mohammad Bhat

et al. 2024

Phys. Scr.

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“…GaN is a preferred material for biosensing applications because of its excellent biocompatibility, chemical resistance, thermal stability, and low power consumption [10]. Due to the spontaneous and piezoelectric polarization, high concentration of two-dimensional electron gas (2DEG) is formed in the GaN-based heterostructure (AlGaN/GaN or InAlN/GaN), which is strongly dependent on the surface state of the heterojunction.…”

Section: Introductionmentioning

confidence: 99%

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

Liu,

Ma,

Guo

et al. 2023

J. Phys. D: Appl. Phys.

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The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T-gate HEMT by numerical simulation. The results indicate that the N-polar GaN/InAlN MOS-HEMT biosensor has higher sensing sensitivity than the Ga-polar MOS-HEMT and N-polar T-gate HEMT biosensors. Furtherly, to improve the sensing performance of N-polar MOS-HEMT, the influence of cavity dimensions, GaN channel layer thickness, and InAlN back barrier layer thickness on device performance was investigated. It is demonstrated that the sensitivity of the biosensor increases as the cavity height decreases and the cavity length increases. Therefore, the sensing performance of the N-polar MOS-HEMT device will be enhanced by thinning the GaN channel layer thickness or increasing the InAlN back barrier thickness, which can be mainly attributed to the variation of the energy band structure and 2DEG concentration in the HEMT heterostructure. Finally, the highest sensitivity can be obtained for the N-polar MOS-HEMT with 6-nm-thick GaN channel layer, 30-nm-thick InAlN back barrier layer, and two 0.9-μm-long and 5-nm-high cavities. This work provides structural optimal design guidance for the N-polar HEMT biosensor.

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AlGaN/GaN high electron mobility transistor for various sensing applications: A review

Bhat

Poonia

Varghese

et al. 2023

Micro and Nanostructures

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A highly sensitive Nano Gap Embedded AlGaN/GaN HEMT sensor for Anti-IRIS antibody detection

Cited by 5 publications

References 34 publications

A theoretical approach to study the frequency dependent dielectric behavior of breast cancer cells using AlN buffer-based AlGaN/GaN HEMT

A theoretical approach to study the frequency dependent dielectric behavior of breast cancer cells using AlN buffer-based AlGaN/GaN HEMT

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

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