Diffusion of gallium in thin gold films on GaAs

Gupta, Ram P.; Khokle, W.S.; Wuerfl, J.; Hartnagel, H.L.

doi:10.1016/0040-6090(87)90145-3

Cited by 22 publications

(16 citation statements)

References 22 publications

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“…4 , Lower , first row, rightmost image). The corresponding diffusion constant was estimated on an order of 10 −4 cm 2 /s, which was at least several orders of magnitude higher than the diffusivity of Au in GaAs and/or that of Ga in Au ( 28 , 32 – 34 ). In comparison, the distance traveled by a ballistic gold or gallium atom with thermal velocity at the same temperature and time span would be on the order of micrometers, much larger than our observed NW length reduction.…”

Section: Resultsmentioning

confidence: 86%

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy

Chen

Tang

et al. 2017

Proc. Natl. Acad. Sci. U.S.A.

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SignificanceImaging chemical/physical reaction dynamics at nanoscale interfaces of a composite nanostructure requires resolutions in both space and time. Using single-pulse methodology, we directly and visually capture the irreversible eutectic-related phase reactions of a single, same metal/semiconductor nanowire at nanometer–nanosecond spatiotemporal resolution by 4D electron microscopy. With a nondestructive free-standing sample preparation free from environmental disturbance that is important for statistical investigation, we have both qualitatively and quantitatively elucidated the transient phase reactions and obtained important physical properties of the newly formed phases, such as latent heat and specific heat. Our work provides an efficient way of quantitatively determining physical properties of a nanoscale object with a tiny small quantity, especially when not available in bulk counterparts.

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Section: Resultsmentioning

confidence: 86%

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy

Chen

Tang

et al. 2017

Proc. Natl. Acad. Sci. U.S.A.

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“…The diffusivity of Ga in Au is of the order of 10 ±13 ±10 ±14 cm 2 s ±1 in our growth-temperature range; [31] using Fick's law, it can be determined that the time required for the nanoparticle to reach equilibrium composition should be in the range of one minute. The Au±Ga solid solution has a maximum (temperature-dependent) composition of around 10 at.-% Ga; a particle of this composition cannot melt under the experimental conditions.…”

Section: Full Papermentioning

confidence: 99%

“…In our system, the particle will melt when its total Ga content exceeds a temperature-dependent critical value. Since this begins during the growth phase, and the Ga diffusion rate is of the same order as the nanowire growth rate, [31] some nanowire growth will be observed before the particle melts.…”

Section: General Trendsmentioning

confidence: 99%

A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires

Dick

Deppert

Karlsson

et al. 2005

Adv Funct Materials

142

149

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Semiconductor nanowires of III–V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so‐called vapor–liquid–solid (VLS) mechanism has often been proposed for III–V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that Au is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III–V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid‐phase solution or compound containing Au and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature‐dependent interaction with Au.

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“…7. It is well known that Ga and As from GaAs diffuse through the contacting metal when the system undergoes a heat cycle (23)(24)(25)(26). Therefore, it is necessary to consider the interactions between GaAs and the barrier material WSi2.…”

Section: Design Considerationsmentioning

confidence: 99%

“…However, this metallization shows degradation upon thermal aging (11,(19)(20)(21)(22)(23) which is primarily attributed to nonuniform penetration of Ni and Au into the semiconductor (18,19,21,22) and out-diffusion of elements of GaAs (11,20,(23)(24)(25)(26). Hence, despite extensive use, AuGe:Ni is not suitable as a high-temperature metallization on GaAs.…”

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confidence: 99%

Design and Characterization of a Thermally Stable Ohmic Contact Metallization on n ‐ GaAs

Gupta

Khokle

Wuerfl

et al. 1990

J. Electrochem. Soc.

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A new metallization system comprising of Ge-WSiz-Au is developed for thermally stable ohmic contacts to n-GaAs. Physical properties of materials in the layers and their chemical reaction stability are considered in designing the multilayered structure. Metallized samples are annealed at various temperatures and systematical]y characterized using electron spectroscopy for chemical analysis (ESCA) and scanning electron microscopy (SEM) to assess the stability of the metallization. Contact resistance is measured to determine its suitability for device application. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.31.134 Downloaded on 2015-06-01 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.31.134 Downloaded on 2015-06-01 to IP

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Diffusion of gallium in thin gold films on GaAs

Cited by 22 publications

References 22 publications

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy

A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires

Design and Characterization of a Thermally Stable Ohmic Contact Metallization on n ‐ GaAs

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