No abstract

No abstract

Piezoelectric thin film AlN has great potential for on-chip devices such as thin-film resonator (TFR)-based bandpass filters. The AlN electromechanical coupling constant, K(2), is an important material parameter that determines the maximum possible bandwidth for bandpass filters. Using a previously published extraction technique, the bulk c-axis electromechanical coupling constant was measured as a function of the AlN X-ray diffraction rocking curve [full width at half maximum (FWHM)]. For FWHM values of less than approximately 4 degrees , K (2) saturates at approximately 6.5%, equivalent to the value for epitaxial AlN. For FWHM values >4 degrees , K(2) gradually decreases to approximately 2.5% at a FWHM of 7.5 degrees . These results indicate that the maximum possible bandwidth for TFR-based bandpass filters using polycrystalline AlN is approximately 80 MHz and that, for 60-MHz bandwidth PCS applications, an AlN film quality of >5.5 degrees FWHM is required.

We observe saturation in the electroabsorption of InGaAs/InP multiple quantum wells (MQWs) at high optical intensity. Contrary to the mechanism for zero-field MQWs, we find that saturation occurs due to the presence of trapped photogenerated holes that screen the MQWs from the applied electric field. By carefully measuring the absorption coefficient of the wells and the emission time for holes, we are able to fit the observed electroabsorption saturation with no adjustable parameters.

No abstract

In Pb1−xEuxTe layers grown by molecular beam epitaxy a drastic reduction of electron mobility is observed for increasing Eu content. This is exploited for the investigation of the electronic properties of the two-dimensional electron gas in PbTe/Pb1−xEuxTe quantum wells (x=4.7%). In such structures we report the observation of the integer quantum Hall effect with a dominance of the odd filling factors due to the large spin splitting in the lead salts.

By using an atomic-force-microscope-based technique, we image the vibration of high-frequency, bulk-mode, thin-film resonators. Our experimental technique is capable of monitoring the vibration of these devices over a broad frequency range, from 1 MHz to beyond 10 GHz, allowing us to obtain quantitative measurements of the piezoelectric properties of thin-film materials in that frequency range. This technique allows us to map the complex vibration modes of a new generation of high-frequency bulk piezoelectric resonators, revealing the presence of vibration patterns of very different characteristic lengths.

No abstract