The Casimir force between uncharged metallic surfaces originates from quantum mechanical zero point fluctuations of the electromagnetic field. We demonstrate that this quantum electrodynamical effect has a profound influence on the oscillatory behavior of microstructures when surfaces are in close proximity (≤ 100 nm). Frequency shifts, hysteretic behavior and bistability caused by the Casimir force are observed in the frequency response of a periodically driven micromachined torsional oscillator.
The reverse bias leakage current in macroscopic GaN Schottky diodes is found to be insensitive to barrier height. Using a scanning current–voltage microscope, we show that the reverse bias current occurs at small isolated regions, while most of the sample is insulating. By comparing the current maps to topographic images and transmission electron microscopy results, we conclude that reverse bias leakage occurs primarily at dislocations with a screw component. Furthermore, for a fixed dislocation density, the V/III ratio during the molecular beam epitaxial growth strongly affects reverse leakage, indicating complex dislocation electrical behavior that is sensitive to the local structural and/or chemical changes.
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