The observation of the integral quantum Hall effect in PbTe/Pb1−xEuxTe quantum well structures

Olver, M. M.; Pastalan, J.; Romaine, Suzanne; Goldberg, B. B.; Springholz, G.; Ihninger, G.; Bauer, G.

doi:10.1016/0038-1098(94)90578-9

Cited by 21 publications

(20 citation statements)

References 11 publications

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“…12 In this paper, we investigate the quantum Hall effect in a narrow PbTe/ Pb 0.9 Eu 0.1 Te quantum well at low temperatures. Both the longitudinal and Hall resistances show clear signatures of the integer quantum Hall effect with, in contrast to previous studies, 13,14 a complete absence of parallel conduction. From the temperature dependence of the magnetoresistance minima, the size of the energy gaps is obtained.…”

Section: Introductioncontrasting

confidence: 45%

“…This results from the dependence of the carrier concentration, band structure, and band parameters on the cooling conditions, probably due to the thermal mismatch between the quantum-well structure and the BaF 2 substrate. However, we are far from the strong deterioration of the electronic properties after several thermal cycles as reported in Olver et al 13 The large "intrinsic" carrier density, due to the Bi doping in our sample, will also tend to mask small "extrinsic" changes in carrier density after thermal cycling.…”

Section: Rotationmentioning

confidence: 91%

“…Therefore, unlike previous samples, the buffer layer and barriers of our heterostructure are fully depleted and at low temperature the electronic transport takes place exclusively in the PbTe quantum well. 13 In order to assign filling factors to the observed plateaus, we plot the inverse Hall resistance in units of e 2 / h as shown in Fig. 1͑c͒.…”

Section: Methodsmentioning

confidence: 99%

“…The large europium content ͑x =10%͒ of the barriers ensures a good confinement of the electrons in the well and reduces considerably the risk of parallel conduction since the carrier density and mobility of PbEuTe decrease drastically with increasing Eu concentration. 13 The barrier on the substrate side and the quantum well are both doped with bismuth from a Bi 2 Te 3 source. The Bi donor level has been shown to be resonant with the conduction band.…”

Section: Methodsmentioning

confidence: 99%

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Multivalley transport and the integer quantum Hall effect in a PbTe quantum well

et al. 2005

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We report magnetotransport measurements performed on a 10 nm n-type PbTe/ Pb 0.9 Eu 0.1 Te quantum well grown on a BaF 2 substrate. In contrast to previous work, both the Hall and longitudinal resistances show a clearly defined signature of the integer quantum Hall effect with no sign of parallel conduction. Due to the large carrier density, the occupation of two longitudinal subbands and one oblique valley subband leads to an unusual sequence of filling factors.

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Section: Introductioncontrasting

confidence: 45%

Section: Rotationmentioning

confidence: 91%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Multivalley transport and the integer quantum Hall effect in a PbTe quantum well

et al. 2005

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“…24 There are experimental evidences that this strain induces movement of dislocations and produces additional defects. 26,27 Obviously, even a single of the enlisted mechanisms would preclude the observation of conductance quantization in a standard material. However, as we show below, this is not the case for PbTe due to its paraelectric nature.…”

Section: Multilayer Fabrication and Propertiesmentioning

confidence: 99%

Disorder suppression and precise conductance quantization in constrictions of PbTe quantum wells

et al. 2005

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Conductance quantization was measured in submicron constrictions of PbTe, patterned into narrow,12 nm wide quantum wells deposited between Pb0.92Eu0.08Te barriers. Because the quantum confinement imposed by the barriers is much stronger than the lateral one, the one-dimensional electron energy level structure is very similar to that usually met in constrictions of AlGaAs/GaAs heterostructures. However, in contrast to any other system studied so far, we observe precise conductance quantization in 2e 2 /h units, despite of significant amount of charged defects in the vicinity of the constriction. We show that such extraordinary results is a consequence of the paraelectric properties of PbTe, namely, the suppression of long-range tails of the Coulomb potentials due to the huge dielectric constant.

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Absence of nonlocal resistance in microstructures of PbTe quantum wells

Kolwas

Grabecki

Trushkin

et al. 2012

Physica Status Solidi (b)

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We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for epitaxial microstructures of n-type PbSe and PbTe, in which pronounced nonlocal effects and reproducible magnetoresistance oscillations were found. Here we show that these effects are brought about by a quasi-periodic network of threading dislocations adjacent to the BaF 2 substrate, which give rise to a p-type interfacial layer and an associated parasitic parallel conductance. We then present results of transport measurements on microstructures of modulation doped PbTe/(Pb,Eu)Te:Bi heterostructures for which the influence of parasitic parallel conductance is minimized, and for which quantum Hall transport had been observed, on similar samples, previously. These structures are of H-shaped geometry and they are patterned of 12 nm thick strained PbTe quantum wells embedded between Pb 0.92 Eu 0.08 Te barriers. The structures have different lateral sizes corresponding to both diffusive and ballistic electron transport in non-equivalent L valleys. For these structures no nonlocal resistance is detected confirming that PbTe is a trivial insulator. The magnitude of spin Hall angle g is estimated to be smaller than 0.02 for PbTe/PbEuTe microstructures in the diffusive regime.

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The observation of the integral quantum Hall effect in PbTe/Pb1−xEuxTe quantum well structures

Cited by 21 publications

References 11 publications

Multivalley transport and the integer quantum Hall effect in a PbTe quantum well

Multivalley transport and the integer quantum Hall effect in a PbTe quantum well

Disorder suppression and precise conductance quantization in constrictions of PbTe quantum wells

Absence of nonlocal resistance in microstructures of PbTe quantum wells

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