Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation

Wood, Thomas H.; Pastalan, J.; Burrus, C.A.; Johnson, Bart; Miller, B. I.; deMiguel, Jose L.; Koren, U.; Young, M.G.

doi:10.1063/1.103539

Cited by 126 publications

(22 citation statements)

References 13 publications

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“…One of the main problems in InGaAsP MQWs is the optical saturation due to the very high valence band discontinuity which makes the escape of heavy holes from the QW very difficult when an external electric field is applied [3]. In this paper we determine experimentally the band offset of MQWs heterostructures, which were designed to have a low band discontinuity to rise the optical power saturation and the modulation frequency of the device.…”

Section: Introductionmentioning

confidence: 99%

Study of the exciton transitions in InGaAsP/InGaAsP MQWs to determine the band offset of the structure

Tarì¹,

Giorgi²,

Cingolani³

2004

phys. stat. sol. (c)

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A detailed analysis of the excitonic transitions of 8 InGaAsP MQWs grown by MOCVD into a InGaAsP barriers with different composition has permitted to experimentally determine the band offset for InGaAsP/InGaAsP heterostructures. We find a value of about 44% referred to the valence band, which is lower than the value reported for unstrained structure (≈ 56%) and in good agreement with the value estimated by a theoretical model specifically developed to design the structure.Additionally, we compared the values of the activation energies, obtained from the fits to exciton transition PL intensity, with the carrier confinement energy evaluated theoretically. The obtained activation energies confirms that in such heterostructures the unipolar detrapping of carriers is more efficient than the exciton escape.

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Section: Introductionmentioning

confidence: 99%

Study of the exciton transitions in InGaAsP/InGaAsP MQWs to determine the band offset of the structure

Tarì¹,

Giorgi²,

Cingolani³

2004

phys. stat. sol. (c)

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“…Schematic diagrams of AlGaInAs MQW band diagram with 1% well strain and -0.6 % barrier strain In (2), the first term is the carrier recombination, the second term the thermionic emission and the third the tunnelling emission [11,12]. It shows that the hole lifetime is reduced with ΔEv,eff.…”

Section: Figurementioning

confidence: 99%

Investigation of 1.3 μm AlGaInAs multi‐quantum wells for electro‐absorption modulated laser

Binet

Décobert

Lagay

et al. 2016

Physica Status Solidi (a)

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Monolithic PIC transmitters using the prefixed optical phase switching concept for BPSK modulation format have been shown promising at 1.55 µm band. These devices could also be crucial for short reach connections and access networks. With this aim, we are studying basic quantum well designs for a laser and an electro-absorption modulator switch to be integrated by selective area growth into PICs at 1.3 µm. Photocurrent measurements and band offset modeling have been performed to determine the MQW stack well-fitted for this application. Broad area laser measurements have also been checked on these structures to verify the material lasing properties. A 6 nm thick well with low barrier seems to be the best trade-off between absorption and shift for 1.3 µm EAM and it also gives good lasing properties.

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“…One promising all-optical processor is the electroabsorption modulator (EAM) [9], [10], which has proven to be a versatile component in ultra fast WDM and OTDM systems with its ability to perform several different functionalities, yet remaining a simple structure. Recently, various all-optical functionalities based on cross-absorption modulation (XAM) [11], [12] such as demultiplexing [13]- [15], wavelength conversion [14], [16]- [18] and all-optical regeneration [19]- [22]. In this paper we report, for the first time to the best of our knowledge, on a novel optical label encoding scheme employing EAM-based wavelength conversion.…”

Section: Introductionmentioning

confidence: 99%

Optical label encoding using electroabsorption modulators and investigation of chirp properties

Chi

Oxenløwe

et al. 2003

J. Lightwave Technol.

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Abstract-A novel scheme of optical label encoding by wavelength conversion based on electroabsorption modulators (EAMs) is reported. Based on the experimental observations, the chirp properties of the wavelength-converted signal are discussed and a wide dynamic range of the chirp -parameter is found allowed. Compared with cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA), the EAM has several advantages, which make it attractive for optical label encoding or other applications as a wavelength converter.

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Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation

Cited by 126 publications

References 13 publications

Study of the exciton transitions in InGaAsP/InGaAsP MQWs to determine the band offset of the structure

Study of the exciton transitions in InGaAsP/InGaAsP MQWs to determine the band offset of the structure

Investigation of 1.3 μm AlGaInAs multi‐quantum wells for electro‐absorption modulated laser

Optical label encoding using electroabsorption modulators and investigation of chirp properties

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