Optical label encoding using electroabsorption modulators and investigation of chirp properties

Xu, Lin; Chi, Nan; Oxenløwe, Leif Katsuo; Yvind, Kresten; Mørk, Jesper; Jeppesen, P.; Hanberg, J.

doi:10.1109/jlt.2003.815504

Cited by 28 publications

(8 citation statements)

References 19 publications

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“…4 In fact, short lifetime is intrinsic to free carriers involved in the band-edge recombination in most semiconductors. 4,5 III-nitride semiconductors are excellent host materials for Er-ions due to their structural and thermal stabilities. IIInitride wide bandgap semiconductors have recently attracted much attention because of their applications in blue/UV optoelectronic devices as well as high power, high temperature electronic devices.…”

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confidence: 99%

Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Wang

Hui

Dahal

et al. 2010

Applied Physics Letters

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We report the characteristics of an erbium-doped GaN semiconductor waveguide amplifier grown by metal-organic chemical vapor deposition. We demonstrated that both 980 and 1480 nm optical pumping were efficient to create population inversion between the I413/2 and I415/2 energy levels. The carrier lifetime in the I413/2 energy band was measured to be approximately 1.5 ms in room temperature, which is slightly shorter than that in erbium-doped silica due to the interaction between the erbium ions and the semiconductor lattice structure. But it is significantly longer than the carrier lifetime in a typical semiconductor optical amplifier which is in the nanosecond regime.

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confidence: 99%

Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Wang

Hui

Dahal

et al. 2010

Applied Physics Letters

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“…Several label-coding techniques have been reported, such as serial-bit labeling [4], subcarrier multiplexing [1]- [3], and orthogonal modulation labeling [5]- [17]. The orthogonal modulation technique encodes the label information on the optical carrier wave in a modulation format that is orthogonal to that of the payload, e.g., the label information is differential phase-shift keying (DPSK) modulated on the phase or frequency-shift keying (FSK) modulated on the optical frequency, while the payload is modulated on the amplitude of the carrier; such methods are termed amplitude shift keying (ASK)/DPSK [7]- [10] and ASK/FSK [11], [12] labeling. Alternatively, the orthogonal label modulation format can be ASK superimposed on a payload with DPSK or FSK modulation [13]- [17].…”

Section: Introductionmentioning

confidence: 99%

“…Alternatively, the orthogonal label modulation format can be ASK superimposed on a payload with DPSK or FSK modulation [13]- [17]. The feasibility of orthogonal modulation labeling has been successfully demonstrated for all-optical label swapping and packet transmission [7]- [17]. Due to the compact spectrum, simple label swapping, and remarkable scalability to high bit rates, orthogonal modulation labeling is regarded as a competing scheme to subcarrier-multiplexed optical labeling.…”

Section: Introductionmentioning

confidence: 99%

“…Due to the compact spectrum, simple label swapping, and remarkable scalability to high bit rates, orthogonal modulation labeling is regarded as a competing scheme to subcarrier-multiplexed optical labeling. A major performance limitation of orthogonal labeling comes from the crosstalk between the two modulation formats induced by the simultaneous amplitude and phase/frequency modulation on the same optical carrier [7]. The receiver sensitivity of the ASK signal improves as the ASK extinction ratio (ER) is increased, while the sensitivity of the DPSK or FSK signal deteriorates due to the reduced signal power when an ASK "0" is transmitted.…”

Section: Introductionmentioning

confidence: 99%

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Improve the performance of orthogonal ASK/DPSK optical label switching by DC-balanced line encoding

Chi

Zhang

et al. 2006

J. Lightwave Technol.

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Abstract-Orthogonal amplitude shift keying/differential phase-shift keying (ASK/DPSK) labeling is a promising approach to ultrahigh packet-rate routing and forwarding in the optical layer. However, the limitation on the payload extinction ratio (ER) is a detrimental effect for network scalability and transparency. This paper presents theoretical and experimental studies of ASK/ DPSK labeling. It proposes that dc-balanced 8B10B coding can greatly improve ER tolerance, which in turn leads to better system performance. By using the 8B10B coding method, the paper demonstrates transmission and optical label swapping for a 40 Gb/s ASK payload and a 2.5 Gb/s DPSK label with an overall power penalty of 3.3 dB for the payload and 0.3 dB for the label. The experimental results also show that the ER is allowed to be as high as 12 dB.Index Terms-Amplitude shift keying, differential phase shift keying, optical label switching, orthogonal modulation.

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“…In recent years a number of optical network functions have been demonstrated using an electroabsorption modulator (EAM) based on the cross-absorption modulation (XAM) [1] including demultiplexing [2,3], trans-multiplexing from wavelength division multiplexing (WDM) to optical time division multiplexing (OTDM) [4], optical label encoding/recognition [5], an all-optical limiter [6], short pulse generation [7], wavelength conversion [8][9][10][11] and all-optical regeneration [12][13][14]. The use of EAMs in all-optical 3R regeneration (i.e., reamplification, reshaping and retiming) with simultaneous wavelength conversion at a rate of 40 Gbit/s has also been realised with direct data mapping from the pump to the * Corresponding author.…”

Section: Introductionmentioning

confidence: 99%

Chirp Control of an Electroabsorption Modulator to be used for Regeneration and Wavelength Conversion at 40 Gbit/s in All-Optical Networking

Jamro

Senior

2005

Photon Netw Commun

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Chirp control to produce low or negative values of chirp at the output of an electroabsorption modulator (EAM) is an important mechanism for reducing the signal degradation due to chromatic dispersion in high-speed transmission over standard single-mode fibre. An analytical model for the chirp performance of an EAM capable of optical regeneration and simultaneous wavelength conversion operating at 40 Gbit/s is derived. A chirp control approach is identified using this model by exploring the tradeoff between the α-parameter describing the chirp factor (based on the nonlinear absorption coefficients) and bias voltage requirements of an EAM. In particular, an optimum range of bias voltage is determined to ensure reduced chirp operation when a two-tone signal (i.e., comprised of bias and modulating voltages) is applied to the EAM. It is also demonstrated for large signal operation at 40 Gbit/s that the optimum range of reverse bias voltage is between 0 and 2 V to obtain low values for the chirp factor (between +1 and −2) in order to facilitate the necessary chirp control in all-optical networking. In addition, it is identified that at 40 Gbit/s higher positive values of the second-and third-order nonlinear coefficients of chirp must be avoided when operating at reverse bias voltages less than 1 V.

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Optical label encoding using electroabsorption modulators and investigation of chirp properties

Cited by 28 publications

References 19 publications

Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Improve the performance of orthogonal ASK/DPSK optical label switching by DC-balanced line encoding

Chirp Control of an Electroabsorption Modulator to be used for Regeneration and Wavelength Conversion at 40 Gbit/s in All-Optical Networking

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