We report the characteristics of an erbium-doped GaN semiconductor waveguide amplifier grown by metal-organic chemical vapor deposition. We demonstrated that both 980 and 1480 nm optical pumping were efficient to create population inversion between the I413/2 and I415/2 energy levels. The carrier lifetime in the I413/2 energy band was measured to be approximately 1.5 ms in room temperature, which is slightly shorter than that in erbium-doped silica due to the interaction between the erbium ions and the semiconductor lattice structure. But it is significantly longer than the carrier lifetime in a typical semiconductor optical amplifier which is in the nanosecond regime.
We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Füchtbauer–Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber’s theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.
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