The time dependence of hot carrier degradation of n-channel MOSFETs and the methodology of accelerated stress have been investigated in detail. The time (T) dependence is foLund to be inconsistent with the simple expression of TN (N 0.25 ), but rather slhow a slow-down of the degradation rate. The slope of the degradation curve is also found to be dependent on the stress bias voltage. The projection of device lifetime by accelerated stress based on the TN law and the assumption of constant slope independent of stress bias is unreliable.
Specific contact resistivities of the Al/TiW/TiSiz/Si system are characterized. It is found that without a TiW barrier layer, AI can penetrate through the TiSi2 layer and significantly affect the TiSiz/Si interfacial contact resistance. Intrinsic TiSil contact resistivities to n+ and p+ silicon are characterized with a TiW barrier between the silicide and the aluminum. TiSiz contact resistivity to n + silicon is found to be about one order of magnitude lower than that of AI to n * silicon. However, Ti& to p * silicon contact resistivity is higher than that of AI to p + silicon and is very sensitive to the boron implant dose. 0 1 1 1 8
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