Specific contact resistivity of TiSi2to P+and n+junctions

Hui, J.; Wong, S.S.; Moll, J.L.

doi:10.1109/edl.1985.26199

Cited by 46 publications

(6 citation statements)

References 5 publications

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“…The very high contact resistivity value measured for TiSi2 to p+ junction seems unsuitable for a real device. However, Hut et al (16) reported that the TiSi2 to p+ contact resistance is very dependent on the boron-implanted dose, and therefore, for a p-type channel MOS device using TiSi2 technology, it is important to keep the surface concentration high enough in order to maintain a low contact resistance.…”

Section: Discussionmentioning

confidence: 99%

Characterization of TiSi2 Ohmic and Schottky Contacts Formed by Rapid Thermal Annealing Technology

Mallardeau¹,

Morand²,

Abonneau³

1989

J. Electrochem. Soc.

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The new trend for TiSi2 formation is rapid thermal annealing of sputtered titanium on silicon. Ohmic contacts of TiSi2 to n § and p § silicon and TiSi2 Schottky diodes to n-type silicon were physically and electrically analyzed in order to characterize the RTA process. A four-terminal Kelvin resistor structure has been used to accurately measure the contact resistance. The redistribution of arsenic and boron-implanted atoms was monitored during silicidation. Sheet resistance measurements, secondary ion mass spectroscopy, and Rutherford backscattering were all performed to characterize the silicide-silicon interface. All the results were discussed in comparison with PtSi to n § to p § contact characteristics. TiSi2 contact resistivity to n + silicon is found to be equal to PtSi contact resistivity to n § silicon. This result, in contradiction with the theory, can be explained by the difference in As redistribution for each silicide. TiSi2 to p § contact resistivity is higher than that of PtSi to p § silicon, but this result can be improved by increasing the p § surface concentration. The measured barrier height of the TiSi2 Schottky diodes is 0.52V, and the diodes show good ideality and low dispersion.

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Section: Discussionmentioning

confidence: 99%

Characterization of TiSi2 Ohmic and Schottky Contacts Formed by Rapid Thermal Annealing Technology

Mallardeau¹,

Morand²,

Abonneau³

1989

J. Electrochem. Soc.

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“…Choosing a typicat value of 30 A/cm2-k 2 (p-type silicon) for A** (13), (bB can then be calculated to be 0.58 _+ 0.02V, which is comparable to the reported barrier height of TiSi= to p-type silicon substrate (0.56V) (9). The value of (bB is not very sensitive to the choice of A** (13).…”

Section: [3]mentioning

confidence: 65%

“…The value of (bB is not very sensitive to the choice of A** (13). Choosing a typicat value of 30 A/cm2-k 2 (p-type silicon) for A** ( 13), (bB can then be calculated to be 0.58 _+ 0.02V, which is comparable to the reported barrier height of TiSi= to p-type silicon substrate (0.56V) (9). The error bar on the calculated barrier height is due to the uncertainty in the area caused by the silicon consumption during titanium silicide deposition.…”

Section: [3]mentioning

confidence: 67%

Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics

Ilderem

Reif

1989

J. Electrochem. Soc.

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We report for the first time the effects of very low pressure chemical vapor deposited (VLPCVD) titanium silicide on device electrical characteristics. The compatibility of this material for VLSI technology is examined through careful characterization of the shallow junction and gate oxide integrities, sheet resistance, and contact resistivity. It is shown that the integrity of the shallow junctions is preserved if the silicon consumption during the silicide deposition is controlled. If this consumption is not controlled, a Schottky diode behavior is observed for the source/drain junctions. It is shown that titanium silicide lowers the specific contact resistivity of metal/source-drain and metal/polysilicon structures by an order of magnitude and a factor of 4-5, respectively. The sheet resistance of the doped polysilicon (gate conductor) is reduced by more than two orders of magnitude through using a TiSi2/polysilicon structure. In addition, it is shown that VLPCVD titanium silicide has no significant effect on the quality of the gate oxide. Slightly lower breakdown voltages for the TiSi2/ polysilicon capacitors are measured, which could be due to the stress induced by siliciding the gate. The results presented in this paper indicate the suitability of VLPCVD titanium silicide films for high quality device fabrication.ABSTRACT A mechanistic study of oxide deposition from silane and nitrous oxide between 495~ and 690~ was performed in a laminar flow, cool wall reactor. Results indicated the existence of two distinct chemical pathways. At high nitrous oxide concentrations, the deposition reaction is dominated by radical chain chemistry initiated by the decomposition of N20. At lovcer N20 concentrations, the decomposition of siIane to form silylene (SiH~) initiates the deposition. Studies of the reaction of disilane and nitrous oxide confirmed the role of Sill2 in the deposition. Reactions involving Sill2 are used to explain the observed growth of sub-stoiehiometric oxides under low N20 conditions. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.122.253.212 Downloaded on 2015-06-06 to IP

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“…Hence, a concomitant reduction in source/drain junction depth is required to minimize short channel effects. [3][4][5][6] However, the sheet resistance of TiSi 2 formed at annealing temperatures lower than 800°C is relatively high because of the C49 structure. The selfaligned-silicide ͑salicide͒ technology has become an essential part of the fabrication process for recent ultrahigh-speed CMOS logic LSI circuits.…”

Section: Introductionmentioning

confidence: 99%

Formation of silicided shallow p+n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation

Juang

Yang

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Effects of stress on electrical transport properties of nickel silicide thin layers synthesized by Ni-ion implantationThe process scheme that forms NiSi-silicided shallow p ϩ n junctions by BF 2 ϩ implantation into thin amorphous-Si (a-Si) or Ni/a-Si films on Si substrates and subsequent Ni silicidation has been studied. As for the scheme using a-Si as an implantation barrier, an NiSi-silicided junction with a leakage of about 0.7 nA/cm 2 at Ϫ5 V is obtained by the sample Ni silicided at 700°C for 30 min. The implantation energy and the crystallinity of the deposited Si films after annealing would greatly affect the junctions formed at various temperatures, attributable to different implantation effects and boron depth profile. However, the junctions formed by rapid thermal processing or high implant energy are considerably degraded at 800°C, attributable to anomalous Ni penetration into the Si substrate with the further silicidation of NiSi into NiSi 2 . On the other hand, the specimens with Ni/a-Si as an implantation barrier sustain few defects, thus significantly suppressing the junction degradation at 800°C. However, the formed junctions are worse than those by the former scheme, mainly due to lower dopant drive-in efficiency.

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Specific contact resistivity of TiSi₂to P⁺and n⁺junctions

Cited by 46 publications

References 5 publications

Characterization of TiSi2 Ohmic and Schottky Contacts Formed by Rapid Thermal Annealing Technology

Characterization of TiSi2 Ohmic and Schottky Contacts Formed by Rapid Thermal Annealing Technology

Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics

Formation of silicided shallow p+n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation

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