The new trend for TiSi2 formation is rapid thermal annealing of sputtered titanium on silicon. Ohmic contacts of TiSi2 to n § and p § silicon and TiSi2 Schottky diodes to n-type silicon were physically and electrically analyzed in order to characterize the RTA process. A four-terminal Kelvin resistor structure has been used to accurately measure the contact resistance. The redistribution of arsenic and boron-implanted atoms was monitored during silicidation. Sheet resistance measurements, secondary ion mass spectroscopy, and Rutherford backscattering were all performed to characterize the silicide-silicon interface. All the results were discussed in comparison with PtSi to n § to p § contact characteristics. TiSi2 contact resistivity to n + silicon is found to be equal to PtSi contact resistivity to n § silicon. This result, in contradiction with the theory, can be explained by the difference in As redistribution for each silicide. TiSi2 to p § contact resistivity is higher than that of PtSi to p § silicon, but this result can be improved by increasing the p § surface concentration. The measured barrier height of the TiSi2 Schottky diodes is 0.52V, and the diodes show good ideality and low dispersion.
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