Formation of silicided shallow p+n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation
Abstract:Effects of stress on electrical transport properties of nickel silicide thin layers synthesized by Ni-ion implantationThe process scheme that forms NiSi-silicided shallow p ϩ n junctions by BF 2 ϩ implantation into thin amorphous-Si (a-Si) or Ni/a-Si films on Si substrates and subsequent Ni silicidation has been studied. As for the scheme using a-Si as an implantation barrier, an NiSi-silicided junction with a leakage of about 0.7 nA/cm 2 at Ϫ5 V is obtained by the sample Ni silicided at 700°C for 30 min. The … Show more
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