Electrical properties of MOS devices made with SILO technology

Hui, J.; Chiu, T.-Y.; Wong, S.S.; Oldham, W.G.

doi:10.1109/iedm.1982.190257

Cited by 15 publications

(9 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similarly, Ramin et al (22) find no change in infrared absorption with annealing, although they do observe "slightly improved" oxidation resistance. Hui et al (26) have reported enhanced leakage current in diodes fabricated using the SILO process with a plasma nitridation step, even though (4) they generally detect no increase in stress-induced defects associated with the use of these very thin nitrided-silicon films. A similar concern must be shown for any wafer cleaning processes employed while the silicon nitride layer' is present.…”

Section: Discussionmentioning

confidence: 99%

“…The effects of local oxidation-induced stress and/or contamination upon the performance of devices fabricated using ion beam nitridation is not well understood. Hui et al (26) have reported enhanced leakage current in diodes fabricated using the SILO process with a plasma nitridation step, even though (4) they generally detect no increase in stress-induced defects associated with the use of these very thin nitrided-silicon films. Our results, measured on 250 • 250 t~m junction diodes (Fig.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Device Processing Aspects of Ion Beam Nitridation

Troxell

Moss

1984

J. Electrochem. Soc.

View full text Add to dashboard Cite

Silicon nitride local oxidation masking layers fabricated by low energy nitrogenion implantation into silicon have been employed in the fabrication of n-channel silicon-gate MOSFET's. Processing considerations which are unique to the application of these very thin (10 nm) silicon nitride films are detailed. The effects of oxygen contamination during implantation are described, as are those of subsequent wafer processing steps such as RCA cleaning and oxygen plasma photoresist stripping. It is also shown that resputtered material from the wafer holder can result in iron contamination of the resulting silicon nitride films. Finally, we show that careful attention to these possible problems can produce transistors with reasonable current-voltage characteristics, as compared to conventionally processed devices.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-17 to IP

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Device Processing Aspects of Ion Beam Nitridation

Troxell

Moss

1984

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…In a previous paper [9], we compared LOCOS and SILO [4], [5], [lo] processes, but we restricted our study to the effective channel width and the narrow channel effect in MOS devices. In this paper, we deal with the influence of the field oxide features (fully or semi-recessed structure, oxide thickness, bird's beak length) on the isolation performances of the parasitic field transistors fabricated with LOCOS and SILO processes.…”

Section: Introductionmentioning

confidence: 99%

Experimental study of the electrical performance of isolation structures

Coppee

Wiele

1988

IEEE Electron Device Lett.

View full text Add to dashboard Cite

The electrical behavior of the parasitic AI-gate MOS transistor on LOCOS and SILO isolation structures is investigated. The influence of the two-dimensional parasitic channel on the isolation performances is pointed out by studying the bird's beak length, the field oxide thickness, and the use of a semi-or fully recessed structure. The measured characteristics are discussed and explained with the assistance of the two-dimensional process simulations of the isolation structures.

show abstract

“…Encroachment also results in a narrower MOSFET channel, thereby reducing the current driving capacity, and hence the ultimate speed of the IC's. Several approaches have been developed to reduce the bird's beak phenomena (4,5), at the expense of complicating the processing, and without solving the problem of thermally induced defects. Moreover, non-LOCOS techniques have similar problems.…”

mentioning

confidence: 99%

Photo‐CVD for VLSI Isolation

Chen

Henderson

Hall

et al. 1984

J. Electrochem. Soc.

View full text Add to dashboard Cite

This paper reviews the technique of photochemical‐assisted vapor deposition (photo‐CVD), and its applications in silicon IC processing. The photo‐CVD process deposits SiO2 films (PHOTOX™) at temperatures as low as 50°C. The deposition process, the resulting film properties, and the use of PHOTOX SiO2 for lateral isolation among transistors and vertical isolation between two‐level interconnects are discussed. A novel process employing PHOTOX deposition in conjunction with a photoresist liftoff can be used to achieve totally isoplanar isolation. Photo‐CVD can also be extended to produce other dielectrics such as silicon nitride and aluminum oxide.

show abstract

Electrical properties of MOS devices made with SILO technology

Cited by 15 publications

References 1 publication

Device Processing Aspects of Ion Beam Nitridation

Device Processing Aspects of Ion Beam Nitridation

Experimental study of the electrical performance of isolation structures

Photo‐CVD for VLSI Isolation

Contact Info

Product

Resources

About