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Stoichiometric thin films of AlSb have been prepared by coevaporation of the elements onto glass substrates held at 550°C. Conductance activation energies of 0.17 and 0.29 eV were observed. Oxygen adsorption causes a level at 0.24 eV that dominates the conductance in air at room temperature. Space-charge-limited current flow was observed at room- and liquid-nitrogen temperatures. The hole concentration and mobility in the layers are estimated at 1015 cm−3 and 1.5 cm2/V-sec, respectively.

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