Growth and properties of vacuum-deposited films of AlSb, AlAs and AlP

Francombe, M. H.; Noreika, A. J.; Zeitman, S.A.; Johnson, J. E.

doi:10.1016/0040-6090(76)90309-6

Cited by 16 publications

(4 citation statements)

References 4 publications

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“…Francombe et al (1976) also reported the same order of p for stoichiometric AISb thin films. The variation of p with Composition dependence of" electrical properties of Al-Sb thin films 1017…”

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confidence: 56%

“…A1-Sb has rapidly growing interest in optoelectronics (Lefebvre et a11987;Raisin et a11987). Several workers studied electrical, thermal, optical and structural properties of stoichiometric A1Sb in bulk (Yee et al 1977;Mattes 1984;Soma 1986, 1987) as well as in thin film states (Francombe et al 1976;Patel and Biradar 1983;Upadhyay et al 1986).…”

Section: Introductionmentioning

confidence: 99%

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Composition dependence of electrical properties of Al-Sb thin films

Nikam¹,

Borse²,

Pawar³

1997

Bull Mater Sci

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Thin films of AI Sb of varying compositions and thickness have been formed on glass substrates employing three-temperature method. Electrical resistivity (p) and activation energy (AE) have been studied as a function of composition, thickness (d) and temperature of the film. Films of A1 Sb system with aluminium < 50 at.%, ~ 50 at.% and > 50 at.% exhibit metallic, semiconducting and metallic to semiconducting behaviours respectively. Activation energy (AE) of semiconducting films found to vary inversely with thickness, is attributed to combined effects of change in barrier height due to the size of grains and stoichiometry in the films.

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confidence: 56%

Section: Introductionmentioning

confidence: 99%

Composition dependence of electrical properties of Al-Sb thin films

Nikam¹,

Borse²,

Pawar³

1997

Bull Mater Sci

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“…They also studied the material properties to find out its donor and acceptor density and energy levels (Johnson, 1965). Francombe et al observed the strong photovoltaic response in vacuum deposited AlSb for the first time in 1976 (Francombe et al, 1976). Number of research groups around the world prepared thin AlSb thin film and studied its electrical and optical properties by vacuum and non vacuum technique.…”

Section: Aluminum Antimony Thin Filmsmentioning

confidence: 99%

AlSb Compound Semiconductor as Absorber Layer in Thin Film Solar Cells

Dhakal¹,

Huh²,

Galipeau³

et al. 2011

Solar Cells - New Aspects and Solutions

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“…I n general, AlSb cannot be used as the substrate. Few studies on the molecular beam epitaxy (MBE) growth of AlSb have been reported [3,4]. To avoid oxidation of AlSb, protection films must be prepared on AlSb, and this is easily done by using the MBE technique.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy of AlSb on GaAs and GaSb on AlSb films

Gotoh

Sasamoto

Kuroda

et al. 1983

Phys. Stat. Sol. (a)

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Single crystalline AlSb films are successfully grown, by MBE on GaAs substrates at temperatures higher t,han 400 "C. The surface gives a C(2 x 6) structure under Sb stabilized conditions. Undoped X1Sb is p-type with resistivities of lo2 t,o lo3 ncm. Then, GaSb films are grown on AISb/GaSs. It, can be seen, from RHEED observation that the interface between AlSb and GaSb is very smooth, and the layer growth continues a t the interface. Fabricating that structure improves the properties of GaSb in comparison with those of GaSb directly grown on GaAs by the relaxation of lattice mismatch.JIittels Molekularstrahlepitnxie (JIBE) werden einkristalline AISb-Schichten auf GaAs-Substrate erfolgreich bei Temperaturen oberhalb 400 "C aufgebracht. Die Oberfliiche ergibt eine C(2 X 6)-Struktur unter Sb-Stabilit5tsbedingiingen. Undotiertes AlSb ist p-leitend mit Leitfiihigkeiten von lo2 bis 103 ncm. AuBerdem werden GaSb-Schichten auf AISb/GaAs aufgebracht. Mittels RHEED-Messungen wird gezeigt, daB die AlSb-GaSb-Grenzflache sehr glatt ist und das Schichtwachstum an der Grenzflache kontinuierlich ist. Die Herst,ellung dieser Struktur verbessert die GaSb-Eigenschaften gegenuber direkt auf GaAs aufgebrachten GaSb-Schicht,en durch Relaxn.tion der Gitterfehlanpassung.

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Growth and properties of vacuum-deposited films of AlSb, AlAs and AlP

Cited by 16 publications

References 4 publications

Composition dependence of electrical properties of Al-Sb thin films

Composition dependence of electrical properties of Al-Sb thin films

AlSb Compound Semiconductor as Absorber Layer in Thin Film Solar Cells

Molecular beam epitaxy of AlSb on GaAs and GaSb on AlSb films

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