Composition dependence of electrical properties of Al-Sb thin films

Nikam, Pandharinath S.; Borse, R. Y.; Pawar, Radheshyam R.

doi:10.1007/bf02744890

Cited by 3 publications

(3 citation statements)

References 19 publications

(12 reference statements)

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“…The 3 h duration of annealing allowed diffusion at such a low temperature, which was reflected by increase in resistance at a particular temperature. The resistance vs temperature graph well agrees with varying compositions of AlSb thin films, which were, metallic to semiconducting (Nikam et al 1997).…”

Section: Sheet Resistance Of Al-sb Thin Filmssupporting

confidence: 61%

“…The Al-Sb has rapidly growing interest in opto-electronics (Lefebvre et al 1987;Raisin et al 1987). Several workers have studied electrical, thermal, optical and structural properties of stoichiometric Al-Sb in bulk as well as in thin film forms (Patrel and Birander 1983;Soma 1986, 1987;Nikam et al 1997;Bedi and Singh 1998). The flash evaporation technique has been employed to grow Al-Sb films (Richards et al 1964).…”

Section: Introductionmentioning

confidence: 99%

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Optical, electrical and thermoelectric power studies of Al-Sb thin film bilayer structure

et al. 2006

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The III-V semiconductors are of great importance due to their applications in various electro-optic devices. The Al-Sb thin film was deposited on glass substrate by thermal evaporation method at a pressure of 10-5 torr. The samples were annealed for 3 h at different constant temperatures in a vacuum chamber at a pressure of 10-5 torr. The electrical resistance vs temperature studies show phase transformation from metallic to semiconducting. The observed positive thermoelectric power indicates that Al-Sb thin films are p-type in nature. The Rutherford back scattering analysis and optical band gap measurements also indicate that the interdiffusion concentration varies with temperature.

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Section: Sheet Resistance Of Al-sb Thin Filmssupporting

confidence: 61%

Section: Introductionmentioning

confidence: 99%

Optical, electrical and thermoelectric power studies of Al-Sb thin film bilayer structure

et al. 2006

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“…Al-Sb has a rapidly growing interest in opto-electronics [3]. A greater number of scientists have studied electrical thermal, optical, and structural properties of stoichiometric Al-Sb in bulk as well as in thin film forms [4][5][6][7]. Flash evaporation technique has been employed to grow Al-Sb films [8].…”

Section: Introductionmentioning

confidence: 99%

Optical and structural analysis of plasma-treated and annealed Al–Sb bilayer thin films

Inbakumar¹,

Kaliani²

2008

Ionics

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Aluminum-antimony (Al-Sb) seems to be a promising semiconducting material for high-temperature application especially for transistors and P-N junction diodes and is a highly coefficient solar material. No attempt has been made to study the bilayer diffusion properties of Al-Sb thin film by plasma exposure. In this paper, the characterization of plasma-exposed Al-Sb bilayer thin films is presented. Thin films were coated by thermal vapor coating technique, and after coating, the sample was annealed and exposed with plasma. Results were obtained from optical band gap data and X-ray diffraction for treated and untreated Al-Sb thin films, and these results were compared with annealed Al-Sb thin films.

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Exploratory study of potential usefulness of cost-effective composites thin films for energy device

Hammi

2023

Mater Renew Sustain Energy

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In this study, we synthesized neat and loaded lead phosphate glass (PbO–P2O5) with the inclusion of Cr, Co, Ni, and Zn using an inexpensive sol–gel technique. These composites were then deposited on silica glass substrates. Our objective was to investigate the influence of these fillers on the properties of the glass. The concentrations of the fillers were varied from 0 to 16 wt%, and the resulting thin films were characterized by measuring the absorption coefficient and estimating the optical band gap at room temperature. Additionally, we measured the electrical resistivity of the semiconducting thin films as a function of filler concentrations and temperature. To assess the overall performance of the films, we calculated the figure of merit using the Iles and Soclof approach, considering the DC resistance versus free carrier concentration and absorption coefficient. Interestingly, our results revealed a significant improvement in the figure of merit at specific filler concentrations. The obtained results are comprehensive and provide detailed insights. They indicate that the thin films produced in this study have the potential to be useful in energy devices, particularly in applications involving P–N junctions and similar structures.

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Composition dependence of electrical properties of Al-Sb thin films

Cited by 3 publications

References 19 publications

Optical, electrical and thermoelectric power studies of Al-Sb thin film bilayer structure

Optical, electrical and thermoelectric power studies of Al-Sb thin film bilayer structure

Optical and structural analysis of plasma-treated and annealed Al–Sb bilayer thin films

Exploratory study of potential usefulness of cost-effective composites thin films for energy device

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