Optical and structural analysis of plasma-treated and annealed Al–Sb bilayer thin films

Abstract

Aluminum-antimony (Al-Sb) seems to be a promising semiconducting material for high-temperature application especially for transistors and P-N junction diodes and is a highly coefficient solar material. No attempt has been made to study the bilayer diffusion properties of Al-Sb thin film by plasma exposure. In this paper, the characterization of plasma-exposed Al-Sb bilayer thin films is presented. Thin films were coated by thermal vapor coating technique, and after coating, the sample was annealed and exposed with plasma. Results were obtained from optical band gap data and X-ray diffraction for treated and untreated Al-Sb thin films, and these results were compared with annealed Al-Sb thin films.